公开(公告)号：US12131891B2

公开(公告)日：2024-10-29

申请号：US17813643

申请日：2022-07-20

Applicant: NGK Insulators, Ltd.

Inventor： Seiya Inoue ,  Tatsuya Kuno

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/327

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base bonded to a bottom surface of the ceramic base and having a refrigerant flow channel, a plurality of holes extending through the cooling base in an up and down direction, and a heat exchange promoting portion that is provided in an area around at least one of the plurality of holes and that promotes heat exchange between refrigerant flowing through the refrigerant flow channel and a wafer placed on the wafer placement surface.

公开(公告)号：US20240355577A1

公开(公告)日：2024-10-24

申请号：US18683071

申请日：2022-08-11

Applicant: ELDICO SCIENTIFIC AG

Inventor： Gunther STEINFELD ,  Harald NIEBEL ,  Christiaan VAN DEN BERG ,  Alexander VAN VEEN ,  Tomi TUOHIMAA

IPC: H01J37/21 ,  H01J37/14 ,  H01J37/147 ,  H01J37/153 ,  H01J37/26 ,  H01J37/295

CPC classification number: H01J37/21 ,  H01J37/14 ,  H01J37/1474 ,  H01J37/153 ,  H01J37/265 ,  H01J37/2955 ,  H01J2237/002 ,  H01J2237/0453 ,  H01J2237/1532

Abstract: A charged-particle beam device for charged-particle crystallography of a crystalline sample comprises a charged-particle source for generating a charged-particle beam to be radiated onto a sample and a charged-particle-optical system downstream the charged-particle source, which is configured to form in a diffraction mode a substantially parallel charged-particle beam at a predefined sample position and in an imaging mode a focused charged-particle beam having a focus at the predefined sample position. The charged-particle-optical system comprises a charged-particle zoom lens system consisting of a first magnetic lens, a second magnetic lens downstream the first magnetic lens and a third magnetic lens downstream the second magnetic lens, wherein at least the second magnetic lens, preferably each one of the first, the second and the third magnetic lens has a variable focal length. The charged-particle-optical system further comprises a single beam limiting aperture with a fixed aperture diameter arranged at a fixed position between the second magnetic lens and the third magnetic lens for limiting the diameter of the charged-particle beam at the sample position. The charged-particle-optical system is configured such that the diameter of the charged-particle beam at the sample position is in a range between 100 nanometer and 1000 nanometer, in particular between 220 nanometer and 250 nanometer, in the diffraction mode, and in a range between 10 nanometer and 200 nanometer in the imaging mode.

公开(公告)号：US20240339301A1

公开(公告)日：2024-10-10

申请号：US18206847

申请日：2023-06-07

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Andrew Nguyen ,  Tom K. Cho

IPC: H01J37/32 ,  B33Y10/00 ,  B33Y80/00

CPC classification number: H01J37/3244 ,  B33Y10/00 ,  B33Y80/00 ,  H01J37/32091 ,  H01J37/3255 ,  H01J37/32568 ,  H01J2237/002 ,  H01J2237/24585 ,  H01J2237/334

Abstract: Example structures, methods, and systems for additive manufacturing of components of source and gas delivery nozzle assembly are disclosed. One example structure includes a unitary gas distribution nozzle assembly that includes an upper electrode portion and a lower electrode portion joined by multiple joining structures, and one or more gas zone divider walls positioned between the upper electrode portion and the lower electrode portion. The unitary gas distribution nozzle assembly is of a single material. Each of the multiple joining structures is positioned between the upper electrode portion and the lower electrode portion. Each of the multiple joining structures is configured to transfer radio-frequency (RF) energy and thermal energy between the upper electrode portion and the lower electrode portion. The one or more gas zone divider walls are configured to separate a region between the upper electrode portion and the lower electrode portion into two or more plenum chambers.

公开(公告)号：US12080510B2

公开(公告)日：2024-09-03

申请号：US18378421

申请日：2023-10-10

Applicant: mi2-factory GmbH

Inventor： Florian Krippendorf ,  Constantin Csato

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/317 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/002 ,  H01J2237/047 ,  H01J2237/057 ,  H01J2237/31705 ,  H01J2237/3171

Abstract: A method of monitoring compliance with filter specification during the implantation of ions into a substrate reading a signature of the filter and comparing the read signature with filter signatures stored in a database to identify properties of the filter including at least one of a maximum allowable temperature of the filter and a maximum allowable accumulated ion dose of the filter. The temperature and/or the accumulated ion dose of the filter is measured while ions are implanted into the substrate by an ion beam passing through the filter. The implantation is terminated when the measured temperature or accumulated ion dose of the filter reaches or exceeds the maximum allowable threshold.

公开(公告)号：US20240282558A1

公开(公告)日：2024-08-22

申请号：US18110668

申请日：2023-02-16

Applicant: Applied Materials, Inc.

Inventor： Sathiyamurthi GOVINDASAMY ,  Harish V. PENMETHSA ,  Suresh PALANISAMY ,  Naresh Kumar ASOKAN ,  Karunakaran NATARAJ

IPC: H01J37/34

CPC classification number: H01J37/3408 ,  H01J37/3452 ,  H01J37/3455 ,  H01J2237/002

Abstract: Apparatus and methods for improving film uniformity in a physical vapor deposition (PVD) process are provided herein. In some embodiments, a magnetron translation assembly comprises a first linear actuator assembly with a first rail which is aligned in a first direction and a first actuator that is configured to position a first mount along the first rail; a magnet assembly is mounted on the first mount, the magnet assembly constructed and arranged to be rotated about an axis perpendicular to the first rail; and a second linear actuator assembly comprising a second mount that is configured to be positioned along a second rail, which is aligned in a second direction and the first linear actuator assembly is coupled to a mounting surface of the second mount.

公开(公告)号：US12046488B2

公开(公告)日：2024-07-23

申请号：US17401333

申请日：2021-08-13

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Koichi Kimura ,  Akira Mikumo

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/683 ,  H01L21/687 ,  H05B3/28

CPC classification number: H01L21/67103 ,  H01L21/68757 ,  H01L21/68785 ,  H05B3/283 ,  H01J37/32724 ,  H01J2237/002 ,  H01J2237/2065 ,  H01J2237/24585 ,  H01L21/67248 ,  H01L21/6833

Abstract: A wafer holder includes a mounting table that has a mounting surface for a workpiece at a top, a supporting member that supports the mounting table from a lower side, a first cylindrical member one end of which is joined hermetically to a lower surface of the mounting table, and a second cylindrical member that is provided inside the first cylindrical member and one end of which is joined hermetically to the lower surface of the mounting table.

公开(公告)号：US20240203715A1

公开(公告)日：2024-06-20

申请号：US18287318

申请日：2022-04-07

Applicant: DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： June Seo KIM ,  Joon Woo KIM

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/18

CPC classification number: H01J37/3405 ,  C23C14/35 ,  C23C14/56 ,  H01J37/18 ,  H01J2237/002

Abstract: A magnetron sputtering device according to the present disclosure includes a chamber having a vacuum state therein, a gas supply pipe configured to supply argon (Ar) gas into the chamber, a sputtering head provided within the chamber and including a sputtering target and a magnetic body disposed on a bottom end of the sputtering target to generate a magnetic field, a power supply configured to supply current to the sputtering target to generate plasma, a cooling device including a refrigerant pipe, through which refrigerant circulating from outside the chamber to the sputtering head, flows and configured to cool the sputtering head to a low temperature, a sputtering shield surrounding an area of the refrigerant pipe located outside the chamber and including a refrigerant inlet and a refrigerant outlet communicating with the refrigerant pipe, wherein the sputtering shield including a communication hole communicating with the chamber to have a vacuum state therein and the refrigerant pipe delivers the refrigerant while being disposed in a dual vacuum structure, wherein in the dual vacuum structure, an area of the refrigerant pipe located outside the chamber is disposed within the sputtering shield having the vacuum state, and an area of the refrigerant pipe located between the sputtering shield and the sputtering head is disposed within the chamber having the vacuum state.

公开(公告)号：US20240177975A1

公开(公告)日：2024-05-30

申请号：US18372954

申请日：2023-09-26

Applicant: SEMES CO., LTD.

Inventor： Yong Jun BAE ,  Seung Pyo LEE ,  Dong Jun PARK ,  Chang Eon PARK ,  Su Won KIM ,  Dho Young KIM

IPC: H01J37/32 ,  F28F3/12

CPC classification number: H01J37/32522 ,  F28F3/12 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32513 ,  H01J2237/002

Abstract: A cooling plate and a plasma processing chamber are proposed. The cooling plate is configured to allow air to flow throughout the entire region of a window while reducing a region of covering the window. The cooling plate is configured to cool a window configured to seal a plasma processing space at an upper portion, and the cooling plate includes a body having a circular plate shape covering a part of a center region of the window, an inlet through which a gas is introduced into the body, and an outlet through which the gas is discharged from the body to the window. A flow path through which the gas flows and a slope formed from the flow path toward the window are formed between the inlet and the outlet.

公开(公告)号：US20240136219A1

公开(公告)日：2024-04-25

申请号：US18299130

申请日：2023-04-11

Applicant: NGK INSULATORS, LTD.

Inventor： Tatsuya KUNO ,  Seiya INOUE

IPC: H01L21/687 ,  H01J37/32

CPC classification number: H01L21/68785 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/68757 ,  H01J2237/002

Abstract: A wafer placement table includes: a ceramic plate including a wafer placement portion having a reference surface on which a number of small protrusions are provided; a cooling plate including a refrigerant flow path; a joining layer with which the ceramic plate and the cooling plate are joined; a recessed groove provided in the reference surface and having a bottom surface positioned lower than the reference surface; a plug arrangement hole passing through the ceramic plate and being open to the bottom surface of the recessed groove; a porous plug disposed in the plug arrangement hole, the porous plug having a top surface positioned at the same height as the bottom surface of the recessed groove and allowing gas to flow; and a gas supply path through which gas is supplied to the porous plug.

公开(公告)号：US20240120171A1

公开(公告)日：2024-04-11

申请号：US18483392

申请日：2023-10-09

Applicant: FEI Company

Inventor： Casper Smit ,  Corne van Rooij ,  Maarten Bischoff ,  Jamie Mc Cormack ,  Marcel Veerhoek ,  Joost Dierkse

IPC: H01J37/24 ,  H01J37/141

CPC classification number: H01J37/241 ,  H01J37/141 ,  H01J2237/002 ,  H01J2237/2802

Abstract: The present invention relates to a method for reducing the power consumption of a charged particle system, the charged particle system comprising at least one charged particle optics element and a cooling assembly configured for cooling the at least one charged particle optics element, the method comprising the steps of running the charged particle system in a standby mode, wherein the total power consumption of the charged particle system is reduced compared to running the charged particle system in an operating mode. Furthermore, the present invention relates to a respective charged particle system.