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    Methods of forming imaging device layers using carrier substrates
    1.
    发明授权
    Methods of forming imaging device layers using carrier substrates 有权
    使用载体基板形成成像装置层的方法

    公开(公告)号：US09269743B2

    公开(公告)日：2016-02-23

    申请号：US14086336

    申请日：2013-11-21

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Ulrich Boettiger ,  Swarnal Borthakur ,  Andrew Perkins

    IPC: H01L27/146

    CPC classification number: H01L27/14685 ,  H01L27/14621

    Abstract: An array of color filter elements may be formed over an array of photodiodes in an integrated circuit for an imaging device using a carrier substrate. The carrier substrate may have a planar surface with a release layer. A layer of color filter material may be applied to the release layer. The carrier substrate may then be flipped and the layer of color filter material may be bonded to the integrated circuit. Heat may be applied to activate the release layer and the carrier substrate may be removed at the interface between the release layer and the color filter material. The layer of color filter material may be patterned either before bonding the layer of color filter material or after the carrier substrate is removed. A layer of microlenses may be formed over the array of color filter elements using a carrier substrate.

    Abstract translation: 可以在用于使用载体衬底的成像装置的集成电路中的光电二极管阵列上形成滤色器元件阵列。 载体基底可以具有带有释放层的平坦表面。 可以将一层滤色器材料施加到释放层。 然后可以将载体衬底翻转，并且滤色器材料层可以结合到集成电路。 可以施加热量以激活释放层，并且可以在剥离层和滤色器材料之间的界面处去除载体衬底。 彩色滤光片材料层可以在结合滤色器材料层之前或在移除载体衬底之后进行图案化。 可以使用载体衬底在彩色滤光器阵列的阵列上形成微透镜层。

    Methods for forming backside illuminated image sensors with front side metal redistribution layers and a permanent carrier layer
    2.
    发明授权
    Methods for forming backside illuminated image sensors with front side metal redistribution layers and a permanent carrier layer 有权
    用前侧金属再分布层和永久性载体层形成背面照明图像传感器的方法

    公开(公告)号：US09362330B2

    公开(公告)日：2016-06-07

    申请号：US14215975

    申请日：2014-03-17

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Swarnal Borthakur ,  Kevin W. Hutto ,  Andrew Perkins ,  Marc Sulfridge

    IPC: H01L31/00 ,  H01L27/146 ,  H01L31/0203 ,  H01L31/20 ,  H01L31/0224

    CPC classification number: H01L27/14687 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/0203 ,  H01L31/022408 ,  H01L31/20 ,  H01L2224/13

    Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.

    Abstract translation: 提供了用于形成具有金属再分布层（RDL）的背面照明（BSI）图像传感器和用于与外部电路的高性能连接的焊料凸块的方法。 在一个实施例中，具有RDL和焊料凸块的BSI图像传感器可以在制造期间使用临时载体形成，其在BSI图像传感器完成之前被移除。 在另一个实施例中，具有RDL和焊料凸块的BSI图像传感器可以在制造期间使用永久载体形成，其部分保留在完整的BSI图像传感器中。 BSI图像传感器可以在形成BSI图像传感器的前侧上的再分布层之前形成。 或者，可以在形成图像晶片的背面上的诸如微透镜和滤色器之类的BSI部件之前，在图像晶片的正面上形成再分布层。

    Imaging systems with integrated light shield structures
    6.
    发明授权
    Imaging systems with integrated light shield structures 有权
    具有集成光屏蔽结构的成像系统

    公开(公告)号：US09497366B1

    公开(公告)日：2016-11-15

    申请号：US14723147

    申请日：2015-05-27

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Ulrich Boettiger ,  Andrew Perkins ,  Marc Sulfridge ,  Swarnal Borthakur

    IPC: H04N5/225 ,  H04N9/04 ,  H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H04N5/2254 ,  H04N9/045

    Abstract: An imaging system may include an image sensor having an array of pixels. The image sensor may include an array of microlenses formed over a substrate and an array of color filter elements interposed between the microlenses and the substrate. Dielectric wall structures may be interposed between the color filter elements. Light shield structures may be formed within or on the dielectric wall structures and may be used to reduce optical crosstalk between adjacent pixels. The light shield structures may be formed on opposing sides or corners of the color filter elements and may partially or fully extend along the height of the color filter elements. In some arrangements, the light shield structures may each have a vertical portion that contacts a side surface of an adjacent color filter element and a horizontal portion that contacts a lower surface of an adjacent color filter element.

    Abstract translation: 成像系统可以包括具有像素阵列的图像传感器。 图像传感器可以包括形成在衬底上的微透镜阵列和插入在微透镜和衬底之间的滤色器元件的阵列。 电介质壁结构可以插在滤色器元件之间。 光屏蔽结构可以形成在电介质壁结构内或上，并且可以用于减少相邻像素之间的光学串扰。 遮光结构可以形成在滤色器元件的相对侧或角上，并且可以沿着滤色器元件的高度部分或全部地延伸。 在一些布置中，遮光结构可以各自具有接触相邻滤色器元件的侧表面的垂直部分和接触相邻滤色器元件的下表面的水平部分。

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