公开(公告)号：US20250015044A1

公开(公告)日：2025-01-09

申请号：US18346976

申请日：2023-07-05

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Hao YAN ,  Kun FENG ,  Sixin JI ,  ZhengDong GE

IPC: H01L23/00 ,  H01L23/373

Abstract: A die-attach process that creates a bond strength sufficient to hold a die to a substrate while it is handled before being permanently attached is disclosed. The die-attach process includes forming locking features in a metal layer of a substrate so a bond at the die-substrate interface is strengthened. The locking features may include a plurality of cavities or slots formed in a metal layer of the substrate. The cavities and slots can increase a surface area and provide anchor points for a die-attach film placed between the die and the substrate.

公开(公告)号：US20250157893A1

公开(公告)日：2025-05-15

申请号：US18507381

申请日：2023-11-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jie CHANG ,  Sen SUN ,  XiaoYing YUAN ,  Sixin JI ,  AnAn XING ,  Keunhyuk LEE

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

Abstract: A package includes a semiconductor die attached to a die attach pad by a first sinter bond. The package further includes a clip having a first end and a second end. The first end of the clip is attached to a device contact pad on the semiconductor die by a second sinter bond and the second end of the clip is attached to a post of a lead by a joint. The package further includes a mold body encapsulating the semiconductor die.

公开(公告)号：US20220189848A1

公开(公告)日：2022-06-16

申请号：US17247525

申请日：2020-12-15

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Leo GU ,  Sixin JI ,  Jie CHANG ,  Keunhyuk LEE ,  Yong LIU

IPC: H01L23/373 ,  H01L23/00 ,  H01L21/48

Abstract: In one general aspect, an apparatus can include a semiconductor component, a substrate including a recess, and a conductive-bonding component. The conductive-bonding component is disposed between the semiconductor component and the substrate. The conductive-bonding component has a first thickness between a bottom of the recess and a bottom surface of the semiconductor component greater than a second thickness between the top of the substrate and the bottom surface of the semiconductor component.

公开(公告)号：US20240030093A1

公开(公告)日：2024-01-25

申请号：US18479565

申请日：2023-10-02

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Leo GU ,  Sixin JI ,  Jie CHANG ,  Keunhyuk LEE ,  Yong LIU

IPC: H01L23/373 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L23/3735 ,  H01L24/32 ,  H01L21/4871 ,  H01L24/83 ,  H01L2224/83815 ,  H01L2224/32237

Abstract: In one general aspect, a method can include forming a recess and a mesa in a metal layer associated with a substrate, and disposing a first portion of a conductive-bonding component on the mesa and a second portion of the conductive-bonding component in the recess. The method can include disposing a semiconductor component on the conductive-bonding component such that the second portion of the conductive-bonding component is disposed between an edge of the semiconductor component and a bottom surface of the recess.