公开(公告)号：US20250169113A1

公开(公告)日：2025-05-22

申请号：US18930006

申请日：2024-10-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H10D30/67

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. The semiconductor device includes a first conductive layer, a first insulating layer, a semiconductor layer, and a pair of second conductive layers. The first insulating layer is in contact with a top surface of the first conductive layer. The semiconductor layer is in contact with a top surface of the first insulating layer. The pair of second conductive layers are in contact with a top surface of the semiconductor layer. The pair of second conductive layers are apart from each other in a region overlapping with the first conductive layer. The semiconductor layer contains indium and oxygen and has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc. In addition, the element M is one or more of gallium, aluminum, yttrium, and tin.

公开(公告)号：US20220359575A1

公开(公告)日：2022-11-10

申请号：US17861430

申请日：2022-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Noritaka ISHIHARA ,  Motoki NAKASHIMA ,  Yoichi KUROSAWA ,  Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA

IPC: H01L27/12 ,  H01L21/02 ,  H01L49/02 ,  H01L29/66 ,  H01L29/786 ,  H01L21/425 ,  H01L21/477

Abstract: To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

公开(公告)号：US20180175210A1

公开(公告)日：2018-06-21

申请号：US15896925

申请日：2018-02-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI ,  Shunsuke ADACHI ,  Takuya HIROHASHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/24 ,  H01L29/04 ,  H01L29/49

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

公开(公告)号：US20160351721A1

公开(公告)日：2016-12-01

申请号：US15232896

申请日：2016-08-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI ,  Shunsuke ADACHI ,  Takuya HIROHASHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

公开(公告)号：US20150155169A1

公开(公告)日：2015-06-04

申请号：US14552064

申请日：2014-11-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Noritaka ISHIHARA ,  Motoki NAKASHIMA ,  Yoichi KUROSAWA ,  Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA

IPC: H01L21/02

CPC classification number: H01L27/127 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/425 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/60 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

Abstract translation: 提供一种制造包含具有导电性的氧化物半导体膜的半导体器件的方法，或者包括具有透光性和导电性的氧化物半导体膜的半导体器件的制造方法。 制造半导体器件的方法包括以下步骤：在第一绝缘膜上形成氧化物半导体膜，在氧化物半导体膜中包含的氧被释放的气氛中进行第一次热处理，并在含氢的 从而形成具有导电性的氧化物半导体膜。

公开(公告)号：US20220149201A1

公开(公告)日：2022-05-12

申请号：US17433458

申请日：2020-02-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/49

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with high reliability is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, and a conductive layer. The semiconductor layer, the second insulating layer, and the conductive layer are stacked in this order over the first insulating layer. The semiconductor layer contains indium and oxygen and has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc. In addition, the element M is one or more of gallium, aluminum, yttrium, and tin.

公开(公告)号：US20220140144A1

公开(公告)日：2022-05-05

申请号：US17433728

申请日：2020-02-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/786

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. The semiconductor device includes a first conductive layer, a first insulating layer, a semiconductor layer, and a pair of second conductive layers. The first insulating layer is in contact with a top surface of the first conductive layer. The semiconductor layer is in contact with a top surface of the first insulating layer. The pair of second conductive layers are in contact with a top surface of the semiconductor layer. The pair of second conductive layers are apart from each other in a region overlapping with the first conductive layer. The semiconductor layer contains indium and oxygen and has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc. In addition, the element M is one or more of gallium, aluminum, yttrium, and tin.

公开(公告)号：US20200373433A1

公开(公告)日：2020-11-26

申请号：US16645522

申请日：2018-10-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Mitsuo MASHIYAMA ,  Toshikatsu KUNII ,  Hironobu TAKAHASHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device is configured to include a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, and a semiconductor layer. The semiconductor layer is positioned over the first insulating layer. The first conductive layer is positioned over the semiconductor layer. The second insulating layer covers a side surface and a bottom surface of the first conductive layer. The third insulating layer is in contact with a top surface of the first insulating layer and part of a top surface of the semiconductor layer and covers a side surface of the second insulating layer. The semiconductor layer contains a metal oxide, the first insulating layer and the second insulating layer each contain an oxide, and the third insulating layer contains a metal nitride.

公开(公告)号：US20190355591A1

公开(公告)日：2019-11-21

申请号：US16524733

申请日：2019-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masahiko HAYAKAWA ,  Takashi HAMOCHI ,  Suzunosuke HIRAISHI

IPC: H01L21/477 ,  H01L21/28 ,  H01L21/02 ,  H01L29/24 ,  H01L29/786

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US20170170326A1

公开(公告)日：2017-06-15

申请号：US15374356

申请日：2016-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Kazuya SUGIMOTO ,  Tsutomu MURAKAWA ,  Motoki NAKASHIMA ,  Shinpei MATSUDA ,  Noritaka ISHIHARA ,  Daisuke KUROSAKI ,  Toshimitsu OBONAI ,  Hiroshi KANEMURA ,  Junichi KOEZUKA

IPC: H01L29/786 ,  H01L27/105 ,  H03K17/687 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  G09G3/2092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/78696 ,  H03K17/687

Abstract: A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.