Manufacture method for fullerence / PEDOT:PSS mixed solution and manufacture method for compound transparent conductive film having fullerence / PEDOT:PSS

    公开(公告)号:US10066062B2

    公开(公告)日:2018-09-04

    申请号:US14786549

    申请日:2015-08-20

    Inventor: Tao Hu Yue Wu

    Abstract: A manufacture method for fullerence/PEDOT:PSS mixed solution and a manufacture method for compound transparent conductive film having fullerence/PEDOT:PSS are provided in the present invention: making fullerence/PEDOT:PSS mixed solution to manufacture a transparent conductive film; sources of applicable materials are broad and prices thereof are cheap; the fullerence/PEDOT:PSS mixed solution can be further utilized to manufacture a compound transparent conductive film having fullerence/PEDOT:PSS on substrates or a variety of devices; the present invention discloses a manufacture method for a compound transparent conductive film having fullerence/PEDOT:PSS, and when manufacturing the compound transparent conductive film having fullerence/PEDOT:PSS via wet coating process which is with low cost and high efficiency comparing with manufacture of ITO film, and furthermore expensive PVD equipment can be waived, production cost can be reduced, manufacturing method can be simplified at the same time, production time is shorter and economic efficiency can be increased; the compound transparent conductive film having fullerence/PEDOT:PSS manufacturing in the present invention has high conductivity and high light transmittance to replace ITO films in the market.

    Display device
    6.
    发明授权

    公开(公告)号:US09927651B2

    公开(公告)日:2018-03-27

    申请号:US14907821

    申请日:2015-12-30

    Inventor: Tao Hu

    Abstract: The present invention provides a display device, which includes a color filter, a quantum dot (QD)-injected photonic crystal film, and a backlight module. The QD-injected photonic crystal film is formed by injecting QDs into a photonic crystal film. Due to the light guiding effect of the photonic crystal, the light emission efficiency of the QDs can be effectively improved. The photonic crystal film includes red, green, and blue light transmission zones. The QDs injected into red, green, and blue light transmission zones of the photonic crystal film are respectively red, green, and blue QDs, so that when white mixed light emitting from the backlight source reaches the QD-injected photonic crystal film, light transmission zones of the photonic crystal film allow only light of corresponding colors to pass such that the QDs contained therein emit light of corresponding colors. Further, these colors of light respectively transmit through the color filters of corresponding colors. Light of other colors is reflected back by the photonic crystal film to be subjected to scattering and re-reflection by the optical film for being subsequently allowed to transmit through the other two light transmission zones of photonic crystal film.

    Method for growing graphene on surface of gate electrode and method for growing graphene on surface of source/drain surface
    9.
    发明授权
    Method for growing graphene on surface of gate electrode and method for growing graphene on surface of source/drain surface 有权
    在栅极表面生长石墨烯的方法和在源极/漏极表面上生长石墨烯的方法

    公开(公告)号:US09543156B1

    公开(公告)日:2017-01-10

    申请号:US14778089

    申请日:2015-08-21

    Inventor: Tao Hu

    CPC classification number: H01L21/28247 H01L21/28506 H01L29/1606

    Abstract: The present invention provides a method for growing graphene on a surface of a gate electrode and a method for growing graphene on a surface of a source/drain electrode, in which a low-temperature plasma enhanced vapor deposition process is adopted to grow a graphene film, of which a film thickness is controllable, on a gate electrode or a source/drain electrode that contains copper, and completely coincides with a pattern of the gate electrode or the source/drain electrode. The manufacturing temperature of graphene is relatively low so that it is possible not to damage the structure of a thin-film transistor to the greatest extents and the supply of carbon sources that is used wide, having low cost and a simple manufacturing process, where existing PECVD facility of a thin-film transistor manufacturing line can be used without additional expense. The gate electrode or the source/drain electrode is covered with graphene and is prevented from contact with moisture and oxygen thereby overcoming the problem of a conventional TFT manufacturing process that a gate electrode or a source/drain electrode that contains copper is readily susceptible to oxidization. Further, the high electrical conductivity of graphene makes it possible not to affect the electrical performance of the entire device.

    Abstract translation: 本发明提供了一种用于在栅电极的表面上生长石墨烯的方法和用于在源/漏电极的表面上生长石墨烯的方法,其中采用低温等离子体增强气相沉积工艺来生长石墨烯膜 ,其中膜厚度可控制在包含铜的栅电极或源/漏电极上,并且与栅电极或源/漏电极的图案完全一致。 石墨烯的制造温度相对较低,从而可能不会在最大程度上损坏薄膜晶体管的结构,并且可以使用广泛的碳源的供应,具有低成本和简单的制造工艺,其中存在 可以使用薄膜晶体管生产线的PECVD设备,而不需要额外的费用。 栅电极或源极/漏电极被石墨烯覆盖,并且防止与水分和氧接触,从而克服了常规TFT制造工艺的问题,即含有铜的栅电极或源极/漏极容易易于氧化 。 此外,石墨烯的高导电性使得不影响整个器件的电性能成为可能。

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