公开(公告)号：US20210246572A1

公开(公告)日：2021-08-12

申请号：US17267847

申请日：2019-08-13

Applicant: SHOWA DENKO K.K. ,  DENSO CORPORATION

Inventor： Shunsuke NOGUCHI ,  Yohei FUJIKAWA ,  Hidetaka TAKABA

IPC: C30B29/36 ,  C30B23/02

Abstract: A SiC single crystal, wherein difference between the curving amount of the atomic arrangement surface on the cut surface cut along the direction through the center in plan view and the curving amount of the atomic arrangement surface on the cut surface cut along the direction that passes through the center of view and is perpendicular to the direction is 60 μm or less.

公开(公告)号：US20210189596A1

公开(公告)日：2021-06-24

申请号：US17267691

申请日：2019-08-13

Applicant: SHOWA DENKO K.K.

Inventor： Shunsuke NOGUCHI ,  Yohei FUJIKAWA ,  Hidetaka TAKABA

IPC: C30B29/36 ,  C30B25/02 ,  C30B33/00 ,  C23C16/32

Abstract: A SiC single crystal, wherein an atomic arrangement surface on the cut surface cut along the direction through the center in plan view and an atomic arrangement surface on the cut surface cut along the direction that passes through the center of the plan view and is perpendicular to the direction are curved in the same direction.

公开(公告)号：US20200182752A1

公开(公告)日：2020-06-11

申请号：US16702180

申请日：2019-12-03

Applicant: SHOWA DENKO K.K.

Inventor： Shunsuke NOGUCHI

IPC: G01N1/32 ,  G01N23/205 ,  G01N1/04 ,  G01N23/2055

Abstract: A method of acquiring a sample for evaluation of a SiC single crystal, comprising: a step of cutting a SiC ingot in a radial direction at a thickness position, which is located in a range from a curved surface which forms a distal end surface in a crystal growth direction to a seed crystal, to obtain a head member which includes the curved surface, wherein the SiC ingot used in the step is a SiC ingot in which SiC thereof is crystal-grown from a seed crystal along a c axis direction; and a step of polishing a silicon surface of the head member to obtain a sample for evaluation.

公开(公告)号：US20200083123A1

公开(公告)日：2020-03-12

申请号：US16544998

申请日：2019-08-20

Applicant: SHOWA DENKO K.K.

Inventor： Shunsuke NOGUCHI

IPC: H01L21/66 ,  H01L21/02 ,  H01L29/34 ,  H01L29/36 ,  H01L29/16 ,  H01L21/67 ,  G01N23/2258

Abstract: Provided is an SiC substrate evaluation that includes irradiating a first surface of an SiC substrate which is cut out from an SiC ingot with excitation light before an epitaxial film is laminated on the first surface to perform photoluminescence measurement.

公开(公告)号：US20200024769A1

公开(公告)日：2020-01-23

申请号：US16512669

申请日：2019-07-16

Applicant: SHOWA DENKO K.K.

Inventor： Shunsuke NOGUCHI

IPC: C30B25/12 ,  C30B29/36 ,  C23C16/32 ,  C23C16/458

Abstract: A pedestal 103 of the present invention is a pedestal 103 for a seed 102 for crystal growth, in which one main surface 103a to which the seed 102 adheres is flat, and the pedestal has a gas-permeable region 106 which a thickness from the one main surface 103a that is formed to be locally thin.

公开(公告)号：US20200080232A1

公开(公告)日：2020-03-12

申请号：US16547709

申请日：2019-08-22

Applicant: SHOWA DENKO K.K.

Inventor： Shunsuke NOGUCHI

IPC: C30B35/00 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16

Abstract: A crystal growth apparatus including: a heat source, a crucible including a container body in which a raw material can be received and a lid part on which a seed crystal can be mounted; a first heat insulating part which is disposed externally of the crucible and in which a first through-hole penetrating in a thickness direction is provided; a second heat insulating part which is disposed externally of the first heat insulating part and in which a second through-hole penetrating in a thickness direction is provided; a moving mechanism configured to move the first heat insulating part and the second heat insulating part relative to each other; and a radiation type temperature measuring unit configured to measure a temperature of the crucible via the first through-hole and the second through-hole.

公开(公告)号：US20200017990A1

公开(公告)日：2020-01-16

申请号：US16335796

申请日：2017-07-31

Applicant: SHOWA DENKO K.K. ,  DENSO CORPORATION

Inventor： Shunsuke NOGUCHI ,  Nobuyki OYA

IPC: C30B23/06 ,  C30B29/36 ,  C23C14/24 ,  C23C14/06 ,  C01B32/956

Abstract: Provided is an SiC-monocrystal growth crucible that includes, at the interior thereof, a monocrystal installation part and a raw-material installation part, and that serves as a crucible for obtaining an SiC monocrystal by means of sublimation, wherein the gas permeability of a first wall of the crucible, which surrounds at least a portion of a first region positioned closer to the raw-material installation part relative to the monocrystal installation part, is lower than the gas permeability of a second wall of the crucible, which surrounds at least a portion of a second region positioned on the opposite side from the raw-material installation part relative to the monocrystal installation part.

公开(公告)号：US20190250096A1

公开(公告)日：2019-08-15

申请号：US16342087

申请日：2017-11-07

Applicant: SHOWA DENKO K.K. ,  DENSO CORPORATION

Inventor： Shunsuke NOGUCHI ,  Nobuyuki OYA

IPC: G01N21/25 ,  G01N21/29 ,  G01N21/27

CPC classification number: G01N21/251 ,  C30B23/06 ,  C30B29/36 ,  G01J3/50 ,  G01N21/27 ,  G01N21/293 ,  G01N2201/062

Abstract: In a method for evaluating tantalum carbide, a carbonization degree of tantalum carbide is evaluated by chromaticity.