公开(公告)号：US20180358556A1

公开(公告)日：2018-12-13

申请号：US15878257

申请日：2018-01-23

Applicant: SK hynix Inc.

Inventor： Dae-Gun KANG ,  Su-Jin CHAE ,  Sung-Kyu MIN ,  Myoung-Sub KIM ,  Chi-Ho KIM ,  Su-Yeon LEE

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1293 ,  H01L27/2409 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/16 ,  H01L45/1675

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a plurality of memory cells each including a variable resistance layer; a substituted dielectric layer filling a space between the plurality of memory cells; and an unsubstituted dielectric layer disposed adjacent to the variable resistance layer of each of the plurality of memory cells, wherein the unsubstituted dielectric layer may include a flowable dielectric material.