公开(公告)号：US20180076791A1

公开(公告)日：2018-03-15

申请号：US15792544

申请日：2017-10-24

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： David T. PETZOLD ,  David Scott WHITEFIELD

IPC: H03H9/02 ,  H01L21/768 ,  H01L27/12 ,  H01L21/764 ,  H01L27/20 ,  H01L23/528

CPC classification number: H01L23/562 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/7624 ,  H01L21/76251 ,  H01L21/764 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/3121 ,  H01L23/5283 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/73 ,  H01L25/16 ,  H01L27/1203 ,  H01L27/20 ,  H01L28/10 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78654 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2223/6677 ,  H01L2224/03 ,  H01L2224/03002 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06135 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/1421 ,  H01L2924/15192 ,  H01L2924/15313 ,  H03H9/02566 ,  H03H9/24 ,  H04B1/40 ,  H04B1/44 ,  H01L2224/45099

Abstract: A method for fabricating a semiconductor device involves providing a transistor device, forming one or more electrical connections to the transistor device, forming one or more dielectric layers over at least a portion of the electrical connections, applying an interface material over at least a portion of the one or more dielectric layers, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.

公开(公告)号：US20160336990A1

公开(公告)日：2016-11-17

申请号：US15154646

申请日：2016-05-13

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： David T. PETZOLD ,  David Scott WHITEFIELD

IPC: H04B1/401 ,  H01L21/84 ,  H03H9/24 ,  H01L23/66 ,  H01L23/528 ,  H01L23/48 ,  H01L27/12 ,  H01L21/768

Abstract: Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET), forming one or more electrical connections to the FET, forming one or more dielectric layers over at least a portion of the electrical connections, and disposing an electrical element over the one or more dielectric layers, the electrical element being in electrical communication with the FET via the one or more electrical connections. RF device fabrication further involves covering at least a portion of the electrical element with a sacrificial material, applying an interface material over the one or more dielectric layers, the interface material at least partially covering the sacrificial material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.

Abstract translation: 射频（RF）器件的制造涉及提供场效应晶体管（FET），形成与FET的一个或多个电连接，在电连接的至少一部分上形成一个或多个电介质层，并且设置电气 元件在一个或多个介电层上，电气元件通过一个或多个电连接与FET电连通。 RF器件制造还包括用牺牲材料覆盖电气元件的至少一部分，在一个或多个电介质层上施加界面材料，所述界面材料至少部分地覆盖牺牲材料，以及去除至少一部分 牺牲材料以形成至少部分被界面层覆盖的空腔。

公开(公告)号：US20160336278A1

公开(公告)日：2016-11-17

申请号：US15154583

申请日：2016-05-13

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： David T. PETZOLD ,  David Scott WHITEFIELD

IPC: H01L23/00 ,  H01L23/528 ,  H04B1/40 ,  H01L21/764 ,  H01L29/78 ,  H01L29/06 ,  H01L21/683

CPC classification number: H01L23/562 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/764 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/3121 ,  H01L23/5283 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/73 ,  H01L25/16 ,  H01L27/1203 ,  H01L27/20 ,  H01L28/10 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/786 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2223/6677 ,  H01L2224/03 ,  H01L2224/03002 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06135 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/1421 ,  H01L2924/15192 ,  H01L2924/15313 ,  H03H9/02566 ,  H03H9/24 ,  H04B1/40 ,  H04B1/44 ,  H01L2224/45099

Abstract: Fabricating of radio-frequency (RF) devices involve providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying a sacrificial material to the backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, the interface material at least partially covering the sacrificial material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.

Abstract translation: 射频（RF）器件的制造涉及提供在形成于半导体衬底上的氧化物层上形成的场效应晶体管（FET），去除半导体衬底的至少一部分以暴露氧化物背面的至少一部分 将牺牲材料施加到氧化物层的背面，将界面材料施加到氧化物层的背侧的至少一部分，所述界面材料至少部分地覆盖牺牲材料，以及去除所述氧化物层的至少一部分 牺牲材料以形成至少部分被界面层覆盖的空腔。

公开(公告)号：US20160009547A1

公开(公告)日：2016-01-14

申请号：US14685554

申请日：2015-04-13

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Jerod F. MASON ,  Dylan Charles BARTLE ,  David Scott WHITEFIELD ,  David T. PETZOLD ,  Dogan GUNES ,  Paul T. DICARLO

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0022 ,  B81B7/02 ,  B81C1/00341 ,  G01C19/56 ,  G01P15/135 ,  H01H59/0009

Abstract: MEMS devices having discharge circuits. In some embodiments, a MEMS device can include a substrate and an electromechanical assembly implemented on the substrate. The MEMS device can further include a discharge circuit implemented relative to the electromechanical assembly. The discharge circuit can be configured to provide a preferred arcing path during a discharge condition affecting the electromechanical assembly. The MEMS device can be, for example, a switching device, a capacitance device, a gyroscope sensor device, an accelerometer device, a surface acoustic wave (SAW) device, or a bulk acoustic wave (BAW) device. The discharge circuit can include a spark gap assembly having one or more spark gap elements configured to facilitate the preferred arcing path.

Abstract translation: 具有放电电路的MEMS器件。 在一些实施例中，MEMS器件可以包括基板和在基板上实现的机电组件。 MEMS器件还可以包括相对于机电组件实现的放电电路。 放电电路可以被配置为在影响机电组件的放电状态期间提供优选的电弧路径。 MEMS器件可以是例如开关器件，电容器件，陀螺仪传感器器件，加速度计器件，表面声波（SAW）器件或体声波（BAW）器件。 放电电路可以包括具有一个或多个火花隙元件的火花隙组件，该火花隙元件被配置为便于优选的电弧路径。

公开(公告)号：US20200168564A1

公开(公告)日：2020-05-28

申请号：US16779263

申请日：2020-01-31

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： David T. PETZOLD ,  David Scott WHITEFIELD

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/762 ,  H03H9/02 ,  H01L27/20 ,  H01L21/683 ,  H04B1/44 ,  H01L29/786 ,  H01L29/66 ,  H01L23/535 ,  H01L21/306 ,  H04B1/40 ,  H01L29/78 ,  H01L29/06 ,  H01L49/02 ,  H01L23/528 ,  H01L21/764 ,  H03H9/24 ,  H01L23/66 ,  H01L21/84 ,  H01L27/12

Abstract: A method for fabricating a semiconductor device involves providing a transistor device formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate, applying an interface material below to at least a portion of the oxide layer, removing a portion of the interface material to form a trench, and at least partially covering the interface material and the trench with a substrate layer to form a cavity

公开(公告)号：US20180076222A1

公开(公告)日：2018-03-15

申请号：US15794747

申请日：2017-10-26

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： David T. PETZOLD ,  David Scott WHITEFIELD

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/84 ,  H01L21/683 ,  H01L21/768 ,  H01L23/535

CPC classification number: H01L23/562 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/7624 ,  H01L21/76251 ,  H01L21/764 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/3121 ,  H01L23/5283 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/73 ,  H01L25/16 ,  H01L27/1203 ,  H01L27/20 ,  H01L28/10 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78654 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2223/6677 ,  H01L2224/03 ,  H01L2224/03002 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06135 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/1421 ,  H01L2924/15192 ,  H01L2924/15313 ,  H03H9/02566 ,  H03H9/24 ,  H04B1/40 ,  H04B1/44 ,  H01L2224/45099

Abstract: A method for fabricating a semiconductor device involves providing a semiconductor substrate, forming an oxide layer in the semiconductor substrate, forming a transistor device over the oxide layer, removing at least part of a backside of the semiconductor substrate, applying a sacrificial material below the oxide layer, covering the sacrificial material with an interface material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.

公开(公告)号：US20160009548A1

公开(公告)日：2016-01-14

申请号：US14688128

申请日：2015-04-16

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Jerod F. MASON ,  Dylan Charles BARTLE ,  David Scott WHITEFIELD ,  Dogan GUNES ,  Paul T. DICARLO ,  David T. PETZOLD

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0041 ,  B81B2201/014 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2201/0292 ,  B81B2207/11 ,  B81C1/00293

Abstract: Microelectromechanical systems (MEMS) having contaminant control features. In some embodiments, a MEMS die can include a substrate and an electromechanical assembly implemented on the substrate. The MEMS die can further include a contaminant control component implemented relative to the electromechanical assembly. The contaminant control component can be configured to move contaminants relative to the electromechanical assembly. For example, such contaminants can be moved away from the electromechanical assembly.

Abstract translation: 具有污染控制特征的微机电系统（MEMS）。 在一些实施例中，MEMS管芯可以包括衬底和在衬底上实现的机电组件。 MEMS管芯还可以包括相对于机电组件实现的污染物控制部件。 污染物控制部件可以配置成相对于机电组件移动污染物。 例如，这种污染物可以从机电组件移开。

公开(公告)号：US20200176398A1

公开(公告)日：2020-06-04

申请号：US16779586

申请日：2020-02-01

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： David T. PETZOLD ,  David Scott WHITEFIELD

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/762 ,  H03H9/02 ,  H01L27/20 ,  H01L21/683 ,  H04B1/44 ,  H01L29/786 ,  H01L29/66 ,  H01L23/535 ,  H01L21/306 ,  H04B1/40 ,  H01L29/78 ,  H01L29/06 ,  H01L49/02 ,  H01L23/528 ,  H01L21/764 ,  H03H9/24 ,  H01L23/66 ,  H01L21/84 ,  H01L27/12

Abstract: A semiconductor device includes a transistor implemented over an oxide layer, one or more electrical connections to the transistor, one or more dielectric layers formed over at least a portion of the electrical connections, an electrical element disposed over the one or more dielectric layers, the electrical element being in electrical communication with the transistor via the one or more electrical connections, a patterned form of sacrificial material covering at least a portion of the electrical element, and an interface layer covering at least a portion of the one or more dielectric layers and the sacrificial material.

公开(公告)号：US20190198456A1

公开(公告)日：2019-06-27

申请号：US16289561

申请日：2019-02-28

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： David T. PETZOLD ,  David Scott WHITEFIELD

IPC: H01L23/00 ,  H03H9/24 ,  H01L21/768 ,  H01L21/84 ,  H01L27/12 ,  H01L23/66 ,  H01L21/764 ,  H01L29/78 ,  H01L29/06 ,  H01L21/306 ,  H01L29/786 ,  H01L29/66 ,  H01L27/20 ,  H01L21/762 ,  H03H9/02 ,  H04B1/40 ,  H01L23/528 ,  H01L49/02 ,  H04B1/44 ,  H01L23/535 ,  H01L21/683

CPC classification number: H01L23/562 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/7624 ,  H01L21/76251 ,  H01L21/764 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/3121 ,  H01L23/5283 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/73 ,  H01L25/16 ,  H01L27/1203 ,  H01L27/20 ,  H01L28/10 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78654 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2223/6677 ,  H01L2224/03 ,  H01L2224/03002 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06135 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/1421 ,  H01L2924/15192 ,  H01L2924/15313 ,  H03H9/02566 ,  H03H9/24 ,  H04B1/40 ,  H04B1/44 ,  H01L2224/45099

Abstract: A method for fabricating a semiconductor die involves providing a semiconductor substrate, forming a plurality of active devices and a plurality of passive devices over the semiconductor substrate, forming one or more electrical connections to the plurality of active devices and the plurality of passive devices, forming one or more dielectric layers over at least a portion of the electrical connections, applying an interface material over at least a portion of the one or more dielectric layers, removing portions of the interface material to form a plurality of trenches, and covering at least a portion of the interface material and the plurality of trenches with a substrate layer to form a plurality of radio-frequency isolation cavities.

公开(公告)号：US20160336228A1

公开(公告)日：2016-11-17

申请号：US15154817

申请日：2016-05-13

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： David T. PETZOLD ,  David Scott WHITEFIELD

IPC: H01L21/768 ,  H04B1/44 ,  H01L29/786 ,  H01L29/66 ,  H01L21/306 ,  H01L23/535

CPC classification number: H01L23/562 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/764 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/3121 ,  H01L23/5283 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/73 ,  H01L25/16 ,  H01L27/1203 ,  H01L27/20 ,  H01L28/10 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/786 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2223/6677 ,  H01L2224/03 ,  H01L2224/03002 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06135 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/1421 ,  H01L2924/15192 ,  H01L2924/15313 ,  H03H9/02566 ,  H03H9/24 ,  H04B1/40 ,  H04B1/44 ,  H01L2224/45099

Abstract: Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.

Abstract translation: 射频（RF）器件的制造涉及提供在形成于半导体衬底上的氧化物层上形成的场效应晶体管（FET），去除半导体衬底的至少一部分以暴露出氧化物背面的至少一部分 将界面材料施加到氧化物层的背面的至少一部分，去除界面材料的至少一部分以形成沟槽，并用衬底层覆盖界面材料和沟槽的至少一部分 以形成空腔。