公开(公告)号：US20240047490A1

公开(公告)日：2024-02-08

申请号：US18490465

申请日：2023-10-19

Applicant: SONY GROUP CORPORATION

Inventor： Ryosuke NAKAMURA ,  Fumihiko KOGA ,  Taiichiro WATANABE

IPC: H01L27/146 ,  G01J1/44

CPC classification number: H01L27/14614 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14638 ,  H01L27/1464 ,  G01J1/44 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14647 ,  G01J2001/448

Abstract: There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.

公开(公告)号：US20220352222A1

公开(公告)日：2022-11-03

申请号：US17751331

申请日：2022-05-23

Applicant: SONY GROUP CORPORATION

Inventor： Ryosuke NAKAMURA ,  Fumihiko KOGA ,  Taiichiro WATANABE

IPC: H01L27/146 ,  G01J1/44

Abstract: There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.