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公开(公告)号：US20240244855A1
公开(公告)日：2024-07-18
申请号：US18622284
申请日：2024-03-29
Applicant: SONY GROUP CORPORATION
Inventor： Tetsuji YAMAGUCHI , Atsushi TODA , Itaru OSHIYAMA
IPC: H10K39/32 , G02B5/20 , H01L27/146 , H01L31/10 , H04N23/11 , H04N23/12 , H04N25/131 , H04N25/75 , H04N25/77 , H04N25/79 , H10K19/00 , H10K19/20
CPC classification number: H10K39/32 , G02B5/201 , G02B5/208 , H01L27/146 , H01L27/1462 , H01L27/14621 , H01L27/1464 , H01L27/14649 , H01L27/14667 , H01L31/10 , H04N23/11 , H04N23/12 , H04N25/79 , H10K19/20 , H10K19/201 , H04N25/131 , H04N25/75 , H04N25/77
Abstract: A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter. One photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts light in a visible light region, the other photoelectric conversion region photoelectrically converts light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.
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公开(公告)号：US20240049484A1
公开(公告)日：2024-02-08
申请号：US18490304
申请日：2023-10-19
Applicant: SONY GROUP CORPORATION
Inventor： Tetsuji YAMAGUCHI
CPC classification number: H10K30/10 , H01L27/14623 , H01L27/14632 , H01L27/14647 , H01L27/14687 , H04N25/75 , H04N25/76 , H10K30/82 , H10K30/87 , H01L27/14636
Abstract: A solid-state imaging element including a phase difference detection pixel pair that includes first and second phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit arranged at an upper side of a semiconductor substrate and a second photoelectric conversion unit arranged within the semiconductor substrate. The first photoelectric conversion film may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.
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公开(公告)号：US20220181567A1
公开(公告)日：2022-06-09
申请号：US17550897
申请日：2021-12-14
Applicant: SONY GROUP CORPORATION
Inventor： Tetsuji YAMAGUCHI
IPC: H01L51/42 , H01L27/146 , H01L51/44 , H04N5/374 , H04N5/378
Abstract: A solid-state imaging element including a phase difference detection pixel pair that includes first and second phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit arranged at an upper side of a semiconductor substrate and a second photoelectric conversion unit arranged within the semiconductor substrate. The first photoelectric conversion film may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.
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Patent Agency Ranking
公开(公告)号：US20220123053A1
公开(公告)日：2022-04-21
申请号：US17564484
申请日：2021-12-29
Applicant: SONY GROUP CORPORATION
Inventor： Tetsuji YAMAGUCHI , Atsushi TODA , Itaru OSHIYAMA
Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.
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公开(公告)号：US20240387602A1
公开(公告)日：2024-11-21
申请号：US18612552
申请日：2024-03-21
Applicant: SONY GROUP CORPORATION
Inventor： Hideaki TOGASHI , Fumihiko KOGA , Tetsuji YAMAGUCHI , Shintarou HIRATA , Taiichiro WATANABE , Yoshihiro ANDO , Toyotaka KATAOKA , Satoshi KEINO , Yukio KANEDA
IPC: H01L27/148 , H01L27/146 , H10K30/30 , H10K30/82 , H10K39/32
Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
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公开(公告)号：US20220336521A1
公开(公告)日：2022-10-20
申请号：US17733809
申请日：2022-04-29
Applicant: SONY GROUP CORPORATION
Inventor： Hideaki TOGASHI , Fumihiko KOGA , Tetsuji YAMAGUCHI , Shintarou HIRATA , Taiichiro WATANABE , Yoshihiro ANDO , Toyotaka KATAOKA , Satoshi KEINO , Yukio KANEDA
IPC: H01L27/148 , H01L27/30 , H01L27/146 , H01L51/42 , H01L51/44
Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
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公开(公告)号：US20230292536A1
公开(公告)日：2023-09-14
申请号：US18303074
申请日：2023-04-19
Applicant: SONY GROUP CORPORATION
Inventor： Tetsuji YAMAGUCHI , Atsushi TODA , Itaru OSHIYAMA
IPC: H10K39/32 , H01L27/146 , H01L31/10 , G02B5/20 , H04N23/11 , H04N23/12 , H04N25/79 , H10K19/20 , H10K19/00
CPC classification number: H10K39/32 , G02B5/201 , G02B5/208 , H01L27/146 , H01L27/1462 , H01L27/14621 , H01L27/1464 , H01L27/14649 , H01L27/14667 , H01L31/10 , H04N23/11 , H04N23/12 , H04N25/79 , H10K19/20 , H10K19/201 , H04N25/75
Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.
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公开(公告)号：US20230282658A1
公开(公告)日：2023-09-07
申请号：US18184295
申请日：2023-03-15
Applicant: Sony Group Corporation
Inventor： Tetsuji YAMAGUCHI
IPC: H01L27/146 , H04N23/75 , H04N23/88 , H04N25/11 , H04N25/70 , H04N25/71 , H04N25/75 , H04N25/711 , H10K39/32 , H01L31/101 , H04N9/64
CPC classification number: H01L27/14614 , H01L27/1464 , H01L27/14647 , H04N23/75 , H04N23/88 , H04N25/11 , H04N25/70 , H04N25/71 , H04N25/75 , H04N25/711 , H10K39/32 , H01L27/14645 , H01L31/1013 , H04N9/646 , H01L27/14638
Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Tr1 in which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Tr1 embedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Tr1.
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