公开(公告)号：US20220093660A1

公开(公告)日：2022-03-24

申请号：US17539956

申请日：2021-12-01

Applicant: SONY GROUP CORPORATION

Inventor： Akira FURUKAWA ,  Yoshihiro ANDO ,  Hideaki TOGASHI ,  Fumihiko KOGA

IPC: H01L27/146 ,  H04N5/225

Abstract: Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nth photoelectric conversion unit segment is formed of an nth charge storage electrode segment, an nth insulating layer segment and an nth photoelectric conversion layer segment. As n increases, the nth photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nth photoelectric conversion unit segment.

公开(公告)号：US20240096914A1

公开(公告)日：2024-03-21

申请号：US18523054

申请日：2023-11-29

Applicant: SONY GROUP CORPORATION

Inventor： Akira FURUKAWA ,  Yoshihiro ANDO ,  Hideaki TOGASHI ,  Fumihiko KOGA

IPC: H01L27/146 ,  H04N23/45 ,  H04N23/55 ,  H10K30/30 ,  H10K30/81 ,  H10K39/32

CPC classification number: H01L27/14614 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H04N23/45 ,  H04N23/55 ,  H10K30/30 ,  H10K30/81 ,  H10K39/32 ,  Y02E10/549

Abstract: Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nth photoelectric conversion unit segment is formed of an nth charge storage electrode segment, an nth insulating layer segment and an nth photoelectric conversion layer segment. As n increases, the nth photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nth photoelectric conversion unit segment.

公开(公告)号：US20220311943A1

公开(公告)日：2022-09-29

申请号：US17638318

申请日：2020-09-03

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION ,  SONY GROUP CORPORATION

Inventor： Yusuke MURAKAWA ,  Hideaki TOGASHI ,  Yoshito NAGASHIMA ,  Akira FURUKAWA ,  Yoshihiro ANDO ,  Yasumasa AKUTAGAWA ,  Taku MINODA ,  Hiroki IWASHITA ,  Takahito NIWA ,  Sho NISHIDA ,  Mikio ISHIMARU

IPC: H04N5/232 ,  H01L27/146

Abstract: An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.

公开(公告)号：US20240387602A1

公开(公告)日：2024-11-21

申请号：US18612552

申请日：2024-03-21

Applicant: SONY GROUP CORPORATION

Inventor： Hideaki TOGASHI ,  Fumihiko KOGA ,  Tetsuji YAMAGUCHI ,  Shintarou HIRATA ,  Taiichiro WATANABE ,  Yoshihiro ANDO ,  Toyotaka KATAOKA ,  Satoshi KEINO ,  Yukio KANEDA

IPC: H01L27/148 ,  H01L27/146 ,  H10K30/30 ,  H10K30/82 ,  H10K39/32

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

公开(公告)号：US20220336521A1

公开(公告)日：2022-10-20

申请号：US17733809

申请日：2022-04-29

Applicant: SONY GROUP CORPORATION

Inventor： Hideaki TOGASHI ,  Fumihiko KOGA ,  Tetsuji YAMAGUCHI ,  Shintarou HIRATA ,  Taiichiro WATANABE ,  Yoshihiro ANDO ,  Toyotaka KATAOKA ,  Satoshi KEINO ,  Yukio KANEDA

IPC: H01L27/148 ,  H01L27/30 ,  H01L27/146 ,  H01L51/42 ,  H01L51/44

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.