公开(公告)号：US20190161645A1

公开(公告)日：2019-05-30

申请号：US16192748

申请日：2018-11-15

Applicant: SOULBRAIN CO., LTD.

Inventor： Kyung Il PARK ,  Seok Joo KIM ,  Hyeong Ju LEE

IPC: C09G1/02

Abstract: A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film is presented, comprising: a solvent; a polishing agent; a pH adjuster; and at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof.The chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film exhibits a high polishing speed and has various polishing selectivities when employed in a process for polishing a polycrystalline silicon film of a semiconductor wafer, and thus the composition may be effectively used as a composition for a process for polishing a polycrystalline silicon surface for the formation of highly integrated multilayer structured devices.