SLURRY COMPOSITION FOR POLISHING AND METHOD FOR POLISHING SEMICONDUCTOR THIN FILM WITH STEPS OF A HIGH ASPECT RATIO

    公开(公告)号:US20190161644A1

    公开(公告)日:2019-05-30

    申请号:US16191471

    申请日:2018-11-15

    Abstract: The present invention relates to a slurry composition for polishing and a method for polishing a semiconductor thin film with steps of a high aspect ratio, and more particularly, by comprising polishing particles, a compound represented by Chemical Formula 1 below, and a compound represented by Chemical Formula 2 below, to make a slurry composition for polishing that has a high polishing speed in high stepped regions while simultaneously protecting low stepped regions to obtain a high degree of flatness without leaving remaining steps after the completion of polishing, and a method for polishing a semiconductor thin film with steps of a high aspect ratio. in Chemical Formula 1, n is an integer of 1 to 10, in Chemical Formula 2, R1 to R4 are independently C1-C10 alkyl groups, and m is an integer of 1 to 10.

Patent Agency Ranking