公开(公告)号：US20230274061A1

公开(公告)日：2023-08-31

申请号：US17601432

申请日：2021-07-09

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Bin LI ,  Dan LU ,  Zhaohui WU

IPC: G06F30/36

CPC classification number: G06F30/36 ,  G06F2119/08

Abstract: A method and system for modeling, simulating, and optimizing a FinFET device based on self-heating effect are provided. The method includes: building and electrically simulating a FinFET device model based on general data through simulation software; thermally simulating the FinFET device model to obtain a thermal parameter; modifying a simulated ambient temperature according to the thermal parameter and modifying the electrical characteristic parameter of the FinFET device model in an environment where a FinFET device is affected by self-heating; and finally building the FinFET device model based on self-heating effect. The method and system for modeling, simulating, and optimizing the FinFET device based on self-heating effect in disclosure provides lowered errors of device simulation, improved modeling precision, and enhanced accuracy of reliability analyses when being compared with conventional modeling without considering the self-heating effect.