公开(公告)号：US20200027993A1

公开(公告)日：2020-01-23

申请号：US16529833

申请日：2019-08-02

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： MIAO XU ,  HUA Xu ,  WEIJING Wu ,  WEIFENG CHEN ,  LEI WANG ,  JUNBIAO PENG

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/306

Abstract: The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.