公开(公告)号：US20210151606A1

公开(公告)日：2021-05-20

申请号：US17158026

申请日：2021-01-26

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： MIAO XU ,  HUA XU ,  MIN LI ,  JUNBIAO PENG ,  LEI WANG ,  JIAN HUA ZOU ,  HONG TAO

IPC: H01L29/786 ,  H01L29/66

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R′ into an indium-containing MO semiconductor to form an InxMyRnR′mOz semiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

公开(公告)号：US20200027993A1

公开(公告)日：2020-01-23

申请号：US16529833

申请日：2019-08-02

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： MIAO XU ,  HUA Xu ,  WEIJING Wu ,  WEIFENG CHEN ,  LEI WANG ,  JUNBIAO PENG

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/306

Abstract: The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.

公开(公告)号：US20210083126A1

公开(公告)日：2021-03-18

申请号：US17105655

申请日：2020-11-27

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： MIAO XU ,  HUA XU ,  MIN LI ,  JUNBIAO PENG ,  LEI WANG ,  JIAN HUA ZOU ,  HONG TAO

IPC: H01L29/786 ,  H01L29/66

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (In2O3)x(MO)y(RO)z semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.