公开(公告)号：US11361949B2

公开(公告)日：2022-06-14

申请号：US16613975

申请日：2019-01-09

Applicant: SPP TECHNOLOGIES CO., LTD.

Inventor： Yasuyuki Hayashi

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: Provided is a substrate placing table (15) capable of reducing influences of external factors such as the temperature inside a chamber (11). The substrate placing table (15) disposed in the chamber (11) in a plasma processing apparatus (1) includes an electrostatic chuck (61) and a cooling jacket (62), and the electrostatic chuck (61) consists of an upper disk part (61a) having an electrode (71) for electrostatic attraction incorporated therein, and a lower disk part (61b) having a greater diameter than the upper disk part (61a) and having a heater (72) incorporated therein. A focus ring (64) disposed outside the upper disk part (61a) in a radial direction of the upper disk part (61a) and covering an upper surface of the lower disk part (61b), an upper annular cover (65) for thermal insulation enclosing the lower disk part (61b) and at least a part of the cooling jacket (62), and a lower annular cover (66) for thermal insulation clamping the cooling jacket (62) between itself and the upper annular cover (65) are made of ceramics.

公开(公告)号：US20150170883A1

公开(公告)日：2015-06-18

申请号：US14418041

申请日：2013-09-25

Applicant: SPP Technologies Co., LTD.

Inventor： Takashi Yamamoto ,  Kazuya Ota ,  Masahiro Sasakura ,  Yasuyuki Hayashi

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32623 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32458 ,  H01J37/32568 ,  H01J37/32633 ,  H01J37/32724 ,  H01J2237/0656 ,  H01J2237/15 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H05H1/46 ,  H05H2001/4667

Abstract: The present invention relates to a substrate etching device capable of improving uniformity of in-plane density of generated plasma to uniformly etch an entire substrate surface. A plasma etching device 1 includes a chamber 2 having a plasma generation space 3 and a processing space 4 set therein, a coil 30 disposed outside an upper body portion 6, a platen 40 disposed in the processing space 4 for placing a substrate K thereon, an etching gas supply mechanism 25 supplying an etching gas into the plasma generation space 3, a coil power supply mechanism 35 supplying RF power to the coil 30, and a platen power supply mechanism 45 supplying RF power to the platen 40. Further, a tapered plasma density adjusting member 20 is fixed on an inner wall of the chamber 2 between the plasma generation space 3 and the platen 40 and, in an upper portion of the chamber 2, a cylindrical core member 10 having a tapered portion formed thereon having a diameter decreasing toward a lower end surface thereof is arranged to extend downward.

Abstract translation: 本发明涉及能够提高产生的等离子体的面内密度的均匀性以均匀地蚀刻整个基板表面的基板蚀刻装置。 等离子体蚀刻装置1包括具有等离子体产生空间3和设置在其中的处理空间4的室2，设置在上部主体部分6外侧的线圈30，设置在处理空间4中以将基板K放置在其上的压板40， 向等离子体产生空间3供给蚀刻气体的蚀刻气体供给机构25，向线圈30供给RF电力的线圈供电机构35以及向压板40供给RF电力的台板供电机构45.此外， 等离子体密度调节构件20固定在等离子体产生空间3和压板40之间的腔室2的内壁上，并且在腔室2的上部中具有形成在其上的锥形部分的圆柱形芯构件10， 朝向其下端面向下方延伸设置为向下延伸。