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公开(公告)号：US11195697B2
公开(公告)日：2021-12-07
申请号：US15760298
申请日：2017-01-20
Applicant: SPP Technologies Co., Ltd.
Inventor： Toshihiro Hayami , Ryosuke Fujii
IPC: H01J37/32 , H01L21/3065 , H05H1/46 , H01L21/67 , H03H7/38
Abstract: A plasma control apparatus includes a power source unit, a resonance producing unit, and a voltmeter. The resonance producing unit includes an LC circuit formed by a coil L1 and a capacitor C1 connected to each other, and a sensor S2 configured to detect a phase difference between current flowing in and voltage applied to the LC circuit, and the capacitor C1 of the LC circuit has a capacitance larger than an expected capacitance of the plasma P. The power source unit 1 configured to control the magnitude of radio-frequency power to be supplied in such a manner as to bring the voltage measured with the voltmeter 5 close to a set voltage as a target, and controls the frequency of the radio-frequency power to be supplied in such a manner as to minimize the phase difference detected with the sensor S2.
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公开(公告)号：US20160153091A1
公开(公告)日：2016-06-02
申请号：US14900535
申请日：2014-03-31
Applicant: SPP TECHNOLOGIES CO., LTD.
Inventor： Toshihiro Hayami , Ryosuke Fujii
IPC: C23C16/56
CPC classification number: C23C16/56 , H01L21/67103 , H01L21/68742 , H05B3/68
Abstract: A heating device capable of efficiently heating an object to be heated with a small heating element and a plasma processing apparatus provided with the heating device are provided. A plasma processing apparatus 1 includes a processing chamber 2 having a plasma generating space 3a defined in an upper portion thereof and a processing space 4a defined in a lower portion thereof, a platen 9 disposed in the processing space 4a for placing a substrate K thereon, a processing gas supply unit 7 supplying a processing gas into the plasma generating space 3a, a plasma generating unit 5 generating plasma from the processing gas supplied into the plasma generating space 3a by RF power, a plasma-generation RF power supply 6 supplying RF power to the plasma generating unit 5, and a heating device 13. The heating device 13 is composed of a heating element 14 including a conductor having a product ρ·μ [Ω·H] of its electrical resistivity ρ [Ω·m] and its magnetic permeability μ [H/m] equal to or greater than 8.0×10−13, and a heating RF power supply 16 supplying RF power to the heating element 14.
Abstract translation: 提供了一种能够用小型加热元件有效地加热待加热物体的加热装置和设置有加热装置的等离子体处理装置。 等离子体处理装置1包括具有限定在其上部的等离子体产生空间3a和限定在其下部的处理空间4a的处理室2，设置在处理空间4a中的用于将基板K放置在其上的压板9， 将处理气体供给到等离子体产生空间3a中的处理气体供给单元7，通过RF功率从供给到等离子体生成空间3a的处理气体产生等离子体的等离子体生成单元5，提供RF功率的等离子体生成用RF电源6 等离子体发生单元5和加热装置13.加热装置13由包括导电体的加热元件14组成，该导体具有其电阻率＆rgr;μ[＆OHgr·H] [＆OHgr;·m]，其磁导率μ[H / m]等于或大于8.0×10-13，以及向加热元件14提供RF功率的加热RF电源16。
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3.发明申请公开(公告)号：US20160118225A1
公开(公告)日：2016-04-28
申请号：US14894922
申请日：2014-03-31
Applicant: SPP TECHNOLOGIES CO., LTD.
Inventor： Toshihiro Hayami
IPC: H01J37/32
CPC classification number: H01J37/3244 , H01J37/32082 , H01J37/32834
Abstract: A plasma etching apparatus 1 includes a processing chamber 2 having a plasma generating portion 3, a processing portion 4, an exhaust portion 5, and a manifold portion 6 defined inside, and an exhaust mechanism 30 for exhausting gas in the processing chamber 2, the exhaust mechanism 30 is composed of a vacuum pump 31 having an intake port connected to an opening 8, a valve body 32 inserted through an opening 9, and a moving mechanism 34 for moving the valve body 32 in upward and downward directions, and the intake port of the vacuum pump 31 is connected to the opening 8 which is formed in a third chamber 2c forming a part of the processing chamber 2.
Abstract translation: 等离子体蚀刻装置1包括具有等离子体产生部分3，处理部分4，排气部分5和限定在其内部的歧管部分6的处理室2和用于排出处理室2中的气体的排气机构30， 排气机构30由具有连接到开口8的进气口的真空泵31，通过开口9插入的阀体32和用于使阀体32沿上下方向移动的移动机构34和进气口 真空泵31的端口连接到形成在形成处理室2的一部分的第三室2c中的开口8。
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公开(公告)号：US20220165044A1
公开(公告)日：2022-05-26
申请号：US17440863
申请日：2019-03-22
Applicant: SPP TECHNOLOGIES CO., LTD.
Inventor： Yutaka TOMINAGA , Takeshi HABE , Norihiro TSUJIOKA
Abstract: A maintenance support system includes a terminal including an imaging device, a device configured to identify a three-dimensional area TA including a maintenance target T with reference to a predetermined reference point, a device for identifying a position (vector A) of the imaging device in an initial state with respect to the reference point, a device for identifying a change of position (vector B) from the initial state of the imaging device, a device for identifying a position (vector C) of the reference point with reference to the imaging device in a post-movement state in which the terminal has moved, and identifying a pixel area corresponding to the three-dimensional area in a captured image, and a device for generating a processed image in which a portion other than the pixel area is made invisible. A communication device is provided for transmitting the processed image to a support terminal.
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公开(公告)号：US20220114484A1
公开(公告)日：2022-04-14
申请号：US17265857
申请日：2020-03-02
Applicant: SPP TECHNOLOGIES CO., LTD.
Inventor： Katsuji HANADA , Yuki FUJIWARA
Abstract: Provided are a production process determination device for a substrate processing apparatus, which can easily suppress deterioration of determination accuracy, and the like. A production process determination device 20 includes a process log acquisition section 21 that acquires process log data of a substrate processing apparatus 10, and a determination section 22 that creates input data based on the process log data and performs determination regarding production process in the substrate processing apparatus based on the input data. The determination section includes multiple learning models 25 each of which receives input of the input data and each of which outputs a determination result regarding the production process, and the multiple learning models are generated by performing machine learning by use of mutually different training datasets. The determination section can switch the learning model to be used for determination among the multiple learning models.
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Patent Agency Ranking
公开(公告)号：US20210366750A1
公开(公告)日：2021-11-25
申请号：US17251859
申请日：2020-01-23
Applicant: SPP TECHNOLOGIES CO., LTD.
Inventor： Keisuke SUNABA , Yuki FUJIWARA
IPC: H01L21/67 , H01L21/66 , H01L21/683 , H01L21/687 , G06N20/00
Abstract: Provided is an abnormality detection apparatus and the like capable of quickly and accurately detecting lifting abnormality of a substrate attributable to detachment failure of a substrate from an electrostatic chuck, or the like. An abnormality detection apparatus 100 includes a measurement section 2 configured to measure a parameter having a correlation with load applied to a lifting mechanism 4; and a detection section 3 configured to detect lifting abnormality of a substrate S. The detection section 3 includes a learning model 31 generated by using machine learning, in which the learning model 31 receives, as input, a plurality of measurements of the parameter continuously measured by the measurement section 2 during lifting-up of the substrate S by the lifting mechanism 4, and outputs a level of lifting abnormality of the substrate S.
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公开(公告)号：US20210265141A1
公开(公告)日：2021-08-26
申请号：US16613975
申请日：2019-01-09
Applicant: SPP TECHNOLOGIES CO., LTD.
Inventor： Yasuyuki HAYASHI
IPC: H01J37/32 , H01L21/67 , H01L21/683 , H01L21/687
Abstract: Provided is a substrate placing table (15) capable of reducing influences of external factors such as the temperature inside a chamber (11). The substrate placing table (15) disposed in the chamber (11) in a plasma processing apparatus (1) includes an electrostatic chuck (61) and a cooling jacket (62), and the electrostatic chuck (61) consists of an upper disk part (61a) having an electrode (71) for electrostatic attraction incorporated therein, and a lower disk part (61 b) having a greater diameter than the upper disk part (61a) and having a heater (72) incorporated therein. A focus ring (64) disposed outside the upper disk part (61a) in a radial direction of the upper disk part (61a) and covering an upper surface of the lower disk part (61 b), an upper annular cover (65) for thermal insulation enclosing the lower disk part (61 b) and at least a part of the cooling jacket (62), and a lower annular cover (66) for thermal insulation clamping the cooling jacket (62) between itself and the upper annular cover (65) are made of ceramics.
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公开(公告)号：US10280084B2
公开(公告)日：2019-05-07
申请号：US15035744
申请日：2014-11-17
Applicant: SPP Technologies Co., Ltd. , TAIYO NIPPON SANSO CORPORATION
Inventor： Shoichi Murakami , Masayasu Hatashita , Hiroshi Taka , Masaya Yamawaki
IPC: C01B21/06 , C01B21/068 , C23C16/34 , H01L21/02 , C23C16/505 , C23C16/509 , C23C16/511 , H01J37/32
Abstract: A method of reducing carbon and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, and improving film quality such as electrical properties. A silicon nitride film is formed with the organic silane and at least one additive gas selected from a group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has improved properties such as reduced leakage current.
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公开(公告)号：US12243210B2
公开(公告)日：2025-03-04
申请号：US17053829
申请日：2020-03-19
Applicant: SPP TECHNOLOGIES CO., LTD.
Inventor： Takeshi Habe , Norihiro Tsujioka
Abstract: A maintenance support system prevents leakage of confidential information by excluding a maintenance target while imposing few restrictions on imaging conditions. A maintenance support system 100 includes a wearable terminal 1 including an imaging device 12, a first identifying device 31 configured to identify a first three-dimensional area TA including a maintenance target T with reference to a predetermined reference point M, and a second identifying device 32 configured to identify a mask pixel area excluding an effective pixel area corresponding to the first three-dimensional area for a captured image acquired by the imaging device in a post-movement state in which the wearable terminal has moved. A processed-image generating device 33 is configured to generate a processed image in which the mask pixel area is made invisible and a communication device 34 is configured to transmit the processed image to a support terminal 2.
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公开(公告)号：US20230230810A1
公开(公告)日：2023-07-20
申请号：US17923931
申请日：2020-10-05
Applicant: SPP Technologies Co., Ltd.
Inventor： Kazuyuki SUEDA , Masahiro SASAKURA , Ryoto YAMAMOTO , Mai SUMIKAWA
CPC classification number: H01J37/3244 , C23C16/0245 , C23C16/50 , C23C16/56 , H01J2237/334 , H01J2237/332 , H01J2237/0203
Abstract: A plasma processing apparatus 100, which has an impact on global warming and allows for high-throughput plasma processing, includes a chamber 1 in which plasma is generated, a mounting table 2 disposed in the chamber, wherein a substrate S is mounted on the mounting table 2, and a gas supply source 3 (3a to 3d) for supplying gas for generating plasma in the chamber, wherein the substrate is subjected to deep etching by executing alternately and repeatedly an etching process S2 of etching the substrate by using plasma and a protective film deposition process S3 of depositing a protective film in a recess formed through the etching process by using plasma. It is characterized in that, in the protective film deposition process S3, a mixed gas of C4F8 and 2,3,3,3-tetrafluoropropene is supplied from the gas supply sources 3b, 3c into the chamber as gas supplied for generating plasma.
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