公开(公告)号：US20160379807A1

公开(公告)日：2016-12-29

申请号：US15190722

申请日：2016-06-23

Applicant: SPTS Technologies Limited

Inventor： ANTHONY PAUL WILBY ,  STEPHEN R. BURGESS ,  IAN MONCRIEFF ,  PAUL DENSLEY ,  CLIVE L. WIDDICKS ,  PAUL RICH ,  ADRIAN THOMAS

IPC: H01J37/32 ,  C23C14/34 ,  H01L21/67

CPC classification number: H01J37/32495 ,  C23C14/34 ,  H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069

Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

Abstract translation: 用于蚀刻衬底的ICP等离子体蚀刻装置包括至少一个室，位于室内的衬底支撑件，用于产生用于蚀刻衬底的等离子体的等离子体生成装置，以及围绕衬底支撑件的保护结构， 在使用中，保护基板的周边部分免于材料的不希望的沉积。 保护结构被布置成电偏压并且由金属材料形成，使得金属材料可以从保护结构溅射到室的内表面上，以将颗粒材料粘附到内表面。