公开(公告)号：US20160240351A1

公开(公告)日：2016-08-18

申请号：US15016613

申请日：2016-02-05

Applicant: SPTS Technologies Limited

Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY ,  CLIVE L. WIDDICKS ,  IAN MONCRIEFF ,  P. DENSLEY

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32477 ,  H01J2237/0262 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/3065

Abstract: A plasma producing apparatus for plasma processing a substrate Includes a chamber having an interior surface, a plasma production device for producing an inductively coupled plasma within the chamber, a substrate support for supporting the substrate during plasma processing, and a Faraday shield disposed within the chamber for shielding at least part of the interior surface from material removed from the substrate by the plasma processing. The plasma production device includes an antenna and a RF power supply for supplying RF power to the antenna with a polarity which is alternated at a frequency of less than or equal to 1000 Hz.

Abstract translation: 用于等离子体处理衬底的等离子体制造装置包括具有内表面的室，用于在室内产生电感耦合等离子体的等离子体生产装置，用于在等离子体处理期间支撑衬底的衬底支撑件和设置在腔室内的法拉第屏蔽 用于通过等离子体处理将至少部分内表面与从衬底去除的材料进行屏蔽。 等离子体生产装置包括天线和RF电源，用于以小于或等于1000Hz的频率交替的极性向天线提供RF功率。

公开(公告)号：US20160379807A1

公开(公告)日：2016-12-29

申请号：US15190722

申请日：2016-06-23

Applicant: SPTS Technologies Limited

Inventor： ANTHONY PAUL WILBY ,  STEPHEN R. BURGESS ,  IAN MONCRIEFF ,  PAUL DENSLEY ,  CLIVE L. WIDDICKS ,  PAUL RICH ,  ADRIAN THOMAS

IPC: H01J37/32 ,  C23C14/34 ,  H01L21/67

CPC classification number: H01J37/32495 ,  C23C14/34 ,  H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069

Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

Abstract translation: 用于蚀刻衬底的ICP等离子体蚀刻装置包括至少一个室，位于室内的衬底支撑件，用于产生用于蚀刻衬底的等离子体的等离子体生成装置，以及围绕衬底支撑件的保护结构， 在使用中，保护基板的周边部分免于材料的不希望的沉积。 保护结构被布置成电偏压并且由金属材料形成，使得金属材料可以从保护结构溅射到室的内表面上，以将颗粒材料粘附到内表面。

公开(公告)号：US20160289815A1

公开(公告)日：2016-10-06

申请号：US15084574

申请日：2016-03-30

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  RHONDA HYNDMAN ,  AMIT RASTOGI ,  EDUARDO PAULO LIMA ,  CLIVE L. WIDDICKS ,  PAUL RICH ,  SCOTT HAYMORE ,  DANIEL COOK

IPC: C23C14/06 ,  C23C14/35 ,  H01J37/34 ,  C23C14/34

CPC classification number: C23C14/0641 ,  C23C14/0617 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/351 ,  H01J37/32669 ,  H01J37/3405 ,  H01J37/3429 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3461 ,  H01J37/3467 ,  H01J37/3476

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract translation: 一种方法是通过用产生一个或多个初级磁场的脉冲DC磁控管装置的脉冲DC磁控溅射将电介质材料沉积在腔室中的衬底上。 在该方法中，溅射材料从靶溅射，其中靶和衬底间隔2.5至10cm的间隔，并且在室内产生二次磁场，这引起由脉冲DC产生的等离子体 磁控管装置朝向腔室的一个或多个壁膨胀。