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    FLUID PROCESSING APPARATUS HAVING FLUID BRANCHING AND JOINING MEMBER
    2.
    发明申请
    FLUID PROCESSING APPARATUS HAVING FLUID BRANCHING AND JOINING MEMBER 有权

    公开(公告)号：US20250083977A1

    公开(公告)日：2025-03-13

    申请号：US18823846

    申请日：2024-09-04

    Applicant: Stanley Electric Co., Ltd.

    Inventor： Ryo SANO ,  Hideaki TANAKA ,  Hiroyuki KATO

    IPC: C02F1/32

    Abstract: A fluid processing apparatus includes: a casing partitioned by a fluid processing region, a fluid inlet region on an upstream side of the fluid processing region and having a fluid inlet, and a fluid outlet region on a downstream side of the fluid processing region and having a fluid outlet; a hollow fluid passage pipe provided in the fluid processing region of the casing; an ultraviolet ray emitting unit provided in the fluid outlet region of the casing; a fluid branching and joining member provided over the fluid inlet region and the fluid processing region of the casing and fixed by ribs to the casing.

    FLUID STERILIZATION DEVICE
    3.
    发明申请
    FLUID STERILIZATION DEVICE 有权

    公开(公告)号：US20220362419A1

    公开(公告)日：2022-11-17

    申请号：US17766075

    申请日：2020-10-14

    Applicant: STANLEY ELECTRIC CO., LTD.

    Inventor： Hideaki TANAKA ,  Hiroyuki KATO ,  Kazuhisa SHINNO

    IPC: A61L2/10

    Abstract: A fluid sterilization device includes a cylindrical body of a housing having a flow passage through which fluid flows in an axial direction, an inflow port through which the fluid flows into the cylindrical body, an outflow port on the outer circumference of the cylindrical body, a light source provided on an end section on an opposite side to the inflow port, and a quartz cap including a cylindrical section and a leading end section. The quartz cap transmits, collects, or scatters ultraviolet light. The cylindrical section of the quartz cap is fitted to an inner wall of the cylindrical body, and a boundary section of the quartz cap is disposed a position coinciding with an end surface of the outflow port on a side close to the first light source or at a position where the boundary section protrudes beyond the end surface.

    FLUID STERILIZING APPARATUS
    4.
    发明公开
    FLUID STERILIZING APPARATUS 审中-公开

    公开(公告)号：US20240059588A1

    公开(公告)日：2024-02-22

    申请号：US18260723

    申请日：2021-12-14

    Applicant: Stanley Electric Co., Ltd.

    Inventor： Hideaki TANAKA ,  Hiroyuki KATO ,  Kazuhisa SHINNO

    IPC: C02F1/32

    CPC classification number: C02F1/32 ,  C02F2201/3228

    Abstract: A fluid sterilizing apparatus includes: a cylindrical inner pipe which has cutouts penetrating in a radial direction and an outlet pipe projecting in the radial direction; an outer pipe which has, between itself and the inner pipe, an annular space in communication with the cutouts and which houses the inner pipe; an inflow pipe which allows a fluid to flow into the outer pipe; an outflow pipe which is provided coaxially with the inflow pipe and which is connected with the outlet pipe to allow the fluid having passed through the annular space to flow out; and a light source which irradiates the fluid passing through the interior of the inner pipe with ultraviolet light via an ultraviolet light transmitting window.

    METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, METHOD FOR PRODUCING ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND AN N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE
    6.
    发明申请
    METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, METHOD FOR PRODUCING ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND AN N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE 有权
    用于生产P型ZnO基化合物半导体层的方法，用于生产ZnO基化合物半导体元件的方法和基于N型ZnO的化合物半导体层状结构

    公开(公告)号：US20140183531A1

    公开(公告)日：2014-07-03

    申请号：US14197900

    申请日：2014-03-05

    Applicant: STANLEY ELECTRIC CO., LTD.

    Inventor： Chizu SAITO ,  Hiroyuki KATO ,  Michihiro SANO

    IPC: H01L29/22 ,  H01L21/02

    CPC classification number: H01L29/227 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/12 ,  H01L29/22 ,  H01L29/36

    Abstract: A method for producing a p-type ZnO based compound semiconductor layer including the steps of (a) supplying (i) Zn, (ii) O, (iii) optional Mg, and (iv) a Group 11 element which is Cu and/or Ag to form a MgxZn1-xO (0≦x≦0.6) single crystal film doped with the Group 11 element; (b) supplying at least one Group 13 element selected from the group consisting of B, Ga, Al, and In on the MgxZn1-xO (0≦x≦0.6) single crystal film; (c) alternately carrying out the steps (a) and (b) to form a laminate structure; and (d) annealing the laminate structure to form a p-type MgxZn1-xO (0≦x≦0.6) layer co-doped with the Group 11 element and the Group 13 element.

    Abstract translation: 一种制备p型ZnO基化合物半导体层的方法，包括以下步骤：（a）提供（i）Zn，（ii）O，（iii）任选的Mg，和（iv）第11族元素​​，其为Cu和/ 或Ag以形成掺杂有第11族元素​​的Mg x Zn 1-x O（0＆nlE; x＆lt; lE; 0.6）单晶膜; （b）在Mg x Zn 1-x O（0＆nlE; x＆nlE; 0.6）单晶膜上提供从由B，Ga，Al和In组成的组中选择的至少一种13族元素; （c）交替地执行步骤（a）和（b）以形成层压结构; 和（d）层压结构退火以形成与第11族元素​​和第13族元素共掺杂的p型Mg x Zn 1-x O（0＆lt; n 1; x＆lt; lE; 0.6）层。

    ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND METHOD FOR PRODUCING THE SAME
    7.
    发明申请
    ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND METHOD FOR PRODUCING THE SAME 审中-公开
    ZnO基化合物半导体元件及其制造方法

    公开(公告)号：US20140084288A1

    公开(公告)日：2014-03-27

    申请号：US14034038

    申请日：2013-09-23

    Applicant: STANLEY ELECTRIC CO., LTD.

    Inventor： Chizu SAITO ,  Hiroyuki KATO ,  Michihiro SANO

    IPC: H01L29/12 ,  H01L21/02

    CPC classification number: H01L29/12 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02631

    Abstract: A method for producing a ZnO based semiconductor element comprises the steps of (a) forming an n-type ZnO based semiconductor layer, (b) forming a ZnO based semiconductor active layer above the n-type ZnO based semiconductor layer, (c) forming a first p-type ZnO based semiconductor layer above the ZnO based semiconductor active layer, and (d) forming a second p-type ZnO based semiconductor layer above the first p-type ZnO based semiconductor layer, wherein the step (d) comprises the steps of (d1) forming an n-type MgxZn1-xO film having a Group 11 element supplied on its surface and doped with a Group 13 element, and (d2) annealing the n-type MgxZn1-xO film for conversion into a p-type film doped with the 11 element, and the first p-type ZnO based semiconductor layer doped an element which reduces diffusion of the Group 11 element and the Group 13 element is formed in the step (c).

    Abstract translation: 一种制备ZnO基半导体元件的方法包括以下步骤：（a）形成n型ZnO基半导体层，（b）在n型ZnO基半导体层上形成ZnO基半导体活性层，（c）形成 在所述ZnO基半导体有源层上方的第一p型ZnO基半导体层，和（d）在所述第一p型ZnO基半导体层上方形成第二p型ZnO基半导体层，其中，所述工序（d） （d1）形成具有在其表面上提供的第11族元素​​的n型Mg x Zn n-x O膜并掺杂第13族元素的步骤，（d2）使n型Mg x Zn n-x O膜退火成p型， 并且在步骤（c）中形成掺杂有降低11族元素​​和13族元素扩散的元素的第一p型ZnO基半导体层。

    FLUID STERILIZATION DEVICE
    8.
    发明公开
    FLUID STERILIZATION DEVICE 审中-公开

    公开(公告)号：US20240150202A1

    公开(公告)日：2024-05-09

    申请号：US18549072

    申请日：2022-02-24

    Applicant: Stanley Electric Co., Ltd.

    Inventor： Hideaki TANAKA ,  Hiroyuki KATO ,  Kazuhisa SHINNO

    IPC: C02F1/32

    CPC classification number: C02F1/325 ,  C02F2201/3228 ,  C02F2301/026

    Abstract: A liquid sterilization device includes: an outer tube through which a fluid to be sterilized flows from one end side to the other end side in the axial direction; a flow-regulating plate that has a plurality of tapered holes having diameters thereof increasing from one end side toward the other end side in the axial direction; and a light source that applies ultraviolet light to a sterilization space on the other end side relative to the flow-regulating plate.

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