Semiconductor Device and Method of Forming Dummy SOP Within Saw Street

    公开(公告)号:US20250079372A1

    公开(公告)日:2025-03-06

    申请号:US18459196

    申请日:2023-08-31

    Abstract: A semiconductor device has a semiconductor wafer or substrate including a plurality of semiconductor die. A plurality of first bumps is formed over an active surface of the semiconductor wafer. A plurality of second bumps is formed within a saw street of the semiconductor wafer separating the plurality of semiconductor die. A top surface of the first bumps is coplanar with a top surface of the second bumps. The second bumps are formed within a first saw street of the semiconductor wafer and further within a second saw street of the semiconductor wafer different from the first saw street. The first bumps are electrically connected to the semiconductor die to provide a function for the semiconductor die. The second bumps are dummy bumps that have no electrical function for the semiconductor die. The semiconductor wafer is singulated through the saw street and second bumps.

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