公开(公告)号：US20250142928A1

公开(公告)日：2025-05-01

申请号：US18497482

申请日：2023-10-30

Applicant: STMicroelectronics International N.V.

Inventor： Cristina TRINGALI ,  Alessandro CONTARINO ,  Raffaella PEZZUTO ,  Ferdinando IUCOLANO ,  Maria Eloisa CASTAGNA ,  Aurore CONSTANT

IPC: H01L29/417 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: Various embodiments of the present disclosure disclose improved gallium nitride (GaN) power devices and methods of fabrication of such devices. A method for fabricating a GaN device may include providing a semiconductor base material with a first and second side. The semiconductor base material includes a GaN material, a frontside barrier layer, and a backside barrier layer. A pGaN landing is formed on a first region of the semiconductor base material and an ohmic contact is formed on a second region of the semiconductor base material. The ohmic contact includes one or more via contact landing and one or more backside barrier contacts that make direct contact with the backside barrier layer.