INSULATING STRUCTURE, METHOD FOR MANUFACTURING INSULATING STRUCTURE, ION GENERATION DEVICE, AND ION IMPLANTER

    公开(公告)号:US20220154328A1

    公开(公告)日:2022-05-19

    申请号:US17530083

    申请日:2021-11-18

    Inventor: Yuuji Ishida

    Abstract: There is provided an insulating structure including a first end portion, a second end portion, a shaft portion connecting the first end portion and the second end portion to each other, and a surrounding portion including an inner surface facing an outer surface of the shaft portion and extending toward the second end portion from the first end portion. A gap between the outer surface of the shaft portion and the inner surface of the surrounding portion is configured to communicate with an outside. The first end portion, the second end portion, the shaft portion, and the surrounding portion are formed of electrical insulating material.

    INSULATING STRUCTURE
    5.
    发明申请

    公开(公告)号:US20180261434A1

    公开(公告)日:2018-09-13

    申请号:US15918656

    申请日:2018-03-12

    Abstract: In an insulating structure which insulates an electrode provided inside a vacuum region of an ion implanter from another member and supports the electrode, a first insulating member supports the electrode. A second insulating member is fitted to the first insulating member to suppress deposition of contamination particles to the first insulating member. The second insulating member is formed of a material having a hardness lower than that of the first insulating member. A Vickers hardness of an outer surface of the second insulating member is 5 GPa or less. Bending strength of the second insulating member is 100 MPa or less. The second insulating member is formed of a material including at least one of boron nitride, a porous ceramic, and a resin.

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