公开(公告)号：US20180122845A1

公开(公告)日：2018-05-03

申请号：US15602185

申请日：2017-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Hyung KIM ,  Seokho KIM ,  SungHyup KIM ,  Jaegeun KIM ,  Taeyeong KIM

IPC: H01L27/146

CPC classification number: H01L27/1469 ,  H01L21/2007 ,  H01L24/01 ,  H01L24/03 ,  H01L24/04 ,  H01L24/74 ,  H01L24/80 ,  H01L27/14634 ,  H01L27/14683 ,  H01L27/14687

Abstract: Disclosed are a substrate bonding apparatus and a method of manufacturing a semiconductor device. The substrate bonding apparatus comprises vacuum pumps, a first chuck engaged with the vacuum pumps and adsorbing a first substrate at vacuum pressure of the vacuum pumps, and a pushing unit penetrating a center of the first chuck and pushing the first substrate away from the first chuck. The first chuck comprises adsorption sectors providing different vacuum pressures in an azimuth direction to the first substrate.

公开(公告)号：US20180090344A1

公开(公告)日：2018-03-29

申请号：US15470044

申请日：2017-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： SungHyup KIM ,  Dong-Wook Kim ,  Sungmoon Park ,  JungHwan Um ,  Taeseok Oh

IPC: H01L21/67 ,  H01L21/673 ,  H01J37/32 ,  H01L21/68 ,  H01L21/3065

Abstract: A ring assembly and a chuck assembly therewith are provided. The ring assembly may include an edge ring that is provided to enclose a chuck body supporting a substrate. The edge ring may include a first top surface, a second top surface positioned outside the first top surface and above the first top surface, a first inner side surface connecting the first top surface to the second top surface, and at least one first flow hole extending outward from one of the first top surface and the first inner side surface, thereby penetrating the edge ring.

公开(公告)号：US20170110291A1

公开(公告)日：2017-04-20

申请号：US15204038

申请日：2016-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hwa KIM ,  Byungbok KANG ,  Chanhoon PARK ,  Jaehyun LEE ,  SungHyup KIM ,  Jaeick HONG

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32844 ,  H01J37/3299 ,  H01J2237/006 ,  Y02C20/30

Abstract: A substrate treatment apparatus may include one or more of a process chamber, a gas supply assembly that may supply one or more gases into the process chamber, a gas exhaust assembly that may exhaust gases from the process chamber, and a gas injector assembly connected to the gas exhaust assembly independently of the process chamber. The gas injector assembly may supply a control gas into the gas exhaust assembly. The apparatus may include a gas injection control device configured to adjustably control the supply of control gas. The gas inject control device may measure an internal pressure of the process chamber and control the supply of control gas based on the internal pressure. The apparatus may include a diffuser that couples the gas injector assembly to the gas exhaust assembly and is configured to diffuse the control gas supplied from the gas injector assembly into the gas exhaust assembly.