公开(公告)号：US20180157587A1

公开(公告)日：2018-06-07

申请号：US15604994

申请日：2017-05-25

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Christopher PETTI ,  Srikanth RANGANATHAN

IPC: G06F12/06 ,  G11C13/00

CPC classification number: G06F12/06 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/004 ,  G11C13/0069

Abstract: A method of writing data to a DNA strand comprises cutting an address block of a selected address-data block unit of the DNA strand to form first and second DNA strings, and inserting a replacement address-data block that includes a replacement data segment between the first DNA string and the second DNA string to provide a rewritten DNA strand having valid address followed by valid data and an invalid address followed by invalid data.

公开(公告)号：US20180197988A1

公开(公告)日：2018-07-12

申请号：US15400244

申请日：2017-01-06

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Perumal RATNAM ,  Christopher PETTI ,  Juan SAENZ ,  Guangle ZHOU ,  Abhijit BANDYOPADHYAY ,  Tanmay KUMAR

IPC: H01L29/78 ,  H01L29/423 ,  H01L23/528 ,  H01L27/24 ,  H01L29/66

CPC classification number: H01L29/7827 ,  H01L23/5283 ,  H01L27/2454 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/66666 ,  H01L29/78642 ,  H01L29/78648

Abstract: A matrix rail structure is formed over a substrate. The matrix rail structure includes a pair of lengthwise sidewalls that extend along a first horizontal direction and comprises, or is at least partially subsequently replaced with, a set of at least one gate electrode rail extending along the first horizontal direction and straight-sidewalled gate dielectrics. A pair of vertical semiconductor channel strips and a pair of laterally-undulating gate dielectrics can be formed on sidewalls of the matrix rail structure for each vertical field effect transistor. At least one laterally-undulating gate electrode extending along the first horizontal direction is formed on the laterally-undulating gate dielectrics. Bottom active regions and top active regions are formed at end portions of the vertical semiconductor channel strips. The vertical field effect transistors can be formed as a two-dimensional array, and may be employed as access transistors for a three-dimensional memory device.

公开(公告)号：US20190027201A1

公开(公告)日：2019-01-24

申请号：US15728840

申请日：2017-10-10

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Christopher PETTI ,  Neil ROBERTSON ,  Abhijit BANDYOPADHYAY

IPC: G11C11/16

CPC classification number: G11C11/1673 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675

Abstract: A memory cell includes a VCMA magnetoelectric memory element and a two-terminal selector element connected in series to the magnetoelectric memory element.

公开(公告)号：US20190288192A1

公开(公告)日：2019-09-19

申请号：US15924944

申请日：2018-03-19

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yuji TAKAHASHI ,  Vincent SHIH ,  Christopher PETTI

IPC: H01L45/00

Abstract: A phase change memory device includes first conductive rails laterally extending along a first horizontal direction over a substrate, a rectangular array of memory pillar structures overlying top surfaces of the first conductive rails, and second conductive rails laterally extending along a second horizontal direction and overlying top surfaces of the rectangular array of memory pillar structures. Each memory pillar structure includes a vertical stack of structural elements including, from one end to another, a selector-side conductive element, a selector element, a selector-memory conductive element, a phase change memory element, and a memory-side conductive element. At least one structural element within the vertical stack is a laterally constricted structural element having laterally recessed sidewalls relative to sidewalls of a respective immediately vertically underlying structural element.

公开(公告)号：US20190221273A1

公开(公告)日：2019-07-18

申请号：US16359846

申请日：2019-03-20

Applicant: SanDisk Technologies LLC

Inventor： Ward PARKINSON ,  Martin HASSNER ,  Nathan FRANKLIN ,  Christopher PETTI

IPC: G11C16/34 ,  G06F3/06 ,  G06F11/08

CPC classification number: G11C16/3431 ,  G06F3/0611 ,  G06F3/0619 ,  G06F3/0625 ,  G06F3/0652 ,  G06F3/0656 ,  G06F3/0679 ,  G06F11/08 ,  G06F12/0246 ,  G06F2212/1041 ,  G06F2212/7202 ,  G06F2212/7205

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for data rewrite operations. A non-volatile memory device comprises a non-volatile memory medium. A non-volatile memory device is configured to determine an error metric for a non-volatile memory medium in response to a read request for the non-volatile memory medium. A non-volatile memory device is configured to receive a refresh command from a controller over a bus. A non-volatile memory device is configured to rewrite data from a non-volatile memory medium during a predefined time period after receiving a refresh command in response to an error metric satisfying an error threshold.