公开(公告)号：US20170157643A1

公开(公告)日：2017-06-08

申请号：US15432890

申请日：2017-02-14

Applicant: Seagate Technology LLC

Inventor： Sang-Min Park ,  Nobuo Kurataka ,  Gennady Gauzner

IPC: B05D3/12 ,  B05D1/26

Abstract: A pattern imprint template incudes a patterned recesses and a layer formed over the patterned recesses. The pattern recesses form a pattern in a resist when brought in contact with a substrate with a resist thereon. The layer formed over the patterned recesses has a first surface energy. The first surface energy is lower in comparison to a second surface energy of the substrate with the resist thereon. The lower first surface energy in comparison to the second surface energy of the substrate avoids trapping gas in the resist by pushing gas toward the imprint template for venting through the patterned recesses.

公开(公告)号：US10828666B2

公开(公告)日：2020-11-10

申请号：US15432890

申请日：2017-02-14

Applicant: Seagate Technology LLC

Inventor： Sang-Min Park ,  Nobuo Kurataka ,  Gennady Gauzner

IPC: B05D3/12 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00 ,  B29C33/62 ,  B29C59/02 ,  B05D1/26 ,  B05D3/10 ,  B29L9/00 ,  B29L31/00

Abstract: A pattern imprint template incudes a patterned recesses and a layer formed over the patterned recesses. The pattern recesses form a pattern in a resist when brought in contact with a substrate with a resist thereon. The layer formed over the patterned recesses has a first surface energy. The first surface energy is lower in comparison to a second surface energy of the substrate with the resist thereon. The lower first surface energy in comparison to the second surface energy of the substrate avoids trapping gas in the resist by pushing gas toward the imprint template for venting through the patterned recesses.

公开(公告)号：US09610712B2

公开(公告)日：2017-04-04

申请号：US15044962

申请日：2016-02-16

Applicant: Seagate Technology LLC

Inventor： Sang-Min Park ,  Nobuo Kurataka ,  Gennady Gauzner

IPC: B05D3/10 ,  B05D3/12 ,  B82Y40/00 ,  B29C33/62 ,  G03F7/00 ,  B82Y10/00 ,  B29C59/02 ,  B29L9/00 ,  B29L31/00

CPC classification number: B05D3/12 ,  B05D1/26 ,  B05D3/10 ,  B29C33/62 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B29K2883/00 ,  B29K2909/14 ,  B29L2009/005 ,  B29L2031/756 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24802

Abstract: The embodiments disclose a method of surface tension control to reduce trapped gas bubbles in an imprint including modifying chemistry aspects of interfacial surfaces of an imprint template and a substrate to modify surface tensions, differentiating the interfacial surface tensions to control interfacial flow rates of a pre-cured liquid resist and controlling pre-cured liquid resist interfacial flow rates to reduce trapping gas and prevent trapped gas bubble defects in cured imprinted resist.

公开(公告)号：US20160158972A1

公开(公告)日：2016-06-09

申请号：US15044962

申请日：2016-02-16

Applicant: Seagate Technology LLC

Inventor： Sang-Min Park ,  Nobuo Kurataka ,  Gennady Gauzner

IPC: B29C33/62 ,  B29C59/02

CPC classification number: B05D3/12 ,  B05D1/26 ,  B05D3/10 ,  B29C33/62 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B29K2883/00 ,  B29K2909/14 ,  B29L2009/005 ,  B29L2031/756 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24802

Abstract: The embodiments disclose a method of surface tension control to reduce trapped gas bubbles in an imprint including modifying chemistry aspects of interfacial surfaces of an imprint template and a substrate to modify surface tensions, differentiating the interfacial surface tensions to control interfacial flow rates of a pre-cured liquid resist and controlling pre-cured liquid resist interfacial flow rates to reduce trapping gas and prevent trapped gas bubble defects in cured imprinted resist.