公开(公告)号：US20240219531A1

公开(公告)日：2024-07-04

申请号：US18518518

申请日：2023-11-23

Applicant: Seer Microelectronics, Inc.

Inventor： Ming-Ching Kuo

IPC: G01S7/4863 ,  G01S7/48 ,  G01S7/4865

CPC classification number: G01S7/4863 ,  G01S7/4808 ,  G01S7/4865

Abstract: A detector module and a ranging device are provided. The detector module includes a detector array including a plurality of pixel groups each of which has a plurality of ranging pixels. A first pixel group of the pixel groups includes a plurality of first ranging pixels each of which includes a first detection region. A second pixel group of the pixel groups includes a plurality of second ranging pixels each of which includes a second detection region. Area of the first detection region and area of the second detection region are different from each other. The ranging device provides higher accuracy due to difference area of the first detection region and the second detection region of the detector module.

公开(公告)号：US20240319007A1

公开(公告)日：2024-09-26

申请号：US18518521

申请日：2023-11-23

Applicant: Seer Microelectronics, Inc.

Inventor： Ming-Ching Kuo

IPC: G01J1/44

CPC classification number: G01J1/44

Abstract: An optical sensing device is provided. The optical sensing device includes an optical sensing element and a detection circuit. The optical sensing element senses an incident photon and generates a sensing signal. The detection circuit detects a pulse width of the sensing signal, and generates a reset signal when the pulse width is larger than a threshold value. Thereby, the optical sensing device is reset according to the reset signal and a dynamic range of the optical sensing device under strong ambient light will be further improved.

公开(公告)号：US20240231283A1

公开(公告)日：2024-07-11

申请号：US18518517

申请日：2023-11-23

Applicant: Seer Microelectronics, Inc.

Inventor： Ming-Ching Kuo ,  Ming-Feng Huang

IPC: G04F10/00

CPC classification number: G04F10/005

Abstract: The present invention relates a multi-shot time-to-digital converter and a time-measurement device. The multi-shot time-to-digital converter includes a time-to-digital conversion circuit and a timing control circuit. The timing control circuit is coupled to the time-to-digital conversion circuit and sending a start signal to the time-to-digital conversion circuit multiple times for measuring a time interval corresponding to the start signal. The time-to-digital conversion circuit obtains a fine phase time based on a plurality of clock signals to measure the time interval and provides a plurality of time-to-digital codes for digital processing. The clock signals have different phases. The time-to-digital codes are further processed to obtain the time-to-digital codes with better resolution.

公开(公告)号：US12235156B2

公开(公告)日：2025-02-25

申请号：US18518521

申请日：2023-11-23

Applicant: Seer Microelectronics, Inc.

Inventor： Ming-Ching Kuo

IPC: G01J1/44 ,  H04N25/773 ,  H10F77/00

Abstract: An optical sensing device is provided. The optical sensing device includes an optical sensing element and a detection circuit. The optical sensing element senses an incident photon and generates a sensing signal. The detection circuit detects a pulse width of the sensing signal, and generates a reset signal when the pulse width is larger than a threshold value. Thereby, the optical sensing device is reset according to the reset signal and a dynamic range of the optical sensing device under strong ambient light will be further improved.

公开(公告)号：US20240243213A1

公开(公告)日：2024-07-18

申请号：US18510712

申请日：2023-11-16

Applicant: Seer Microelectronics, Inc.

Inventor： Ming-Ching Kuo

IPC: H01L31/107

CPC classification number: H01L31/107

Abstract: The present application discloses a single photon avalanche diode, which comprises a first double diffusion region and a first heavily-doped implant region, the first double diffusion region is a second conductivity type. The first heavily-doped implant region is located on the first double diffusion region and is a first conductivity type, a multiplication region is formed between the first heavily-doped implant region and the first double diffusion region. The multiplication region of the single photon avalanche diode according to the present application is formed by the first double diffusion region, which may feature characteristics of low breakdown voltage and low dark count rate.