公开(公告)号：US20240334741A1

公开(公告)日：2024-10-03

申请号：US18291047

申请日：2021-10-11

Applicant: Sharp Display Technology Corporation

Inventor： Tadayoshi MIYAMOTO ,  Sohtaroh TANAKA ,  Fumie YASHIRO

IPC: H10K59/121 ,  H10K59/80

CPC classification number: H10K59/1213 ,  H10K59/871

Abstract: A display device includes: a resin substrate, and a thin film transistor layer, wherein in the thin film transistor layer, a first thin film transistor and a second thin film transistor are provided for each of subpixels. The first thin film transistor includes a first semiconductor layer formed of polysilicon, a first gate electrode provided on the resin substrate side of the first semiconductor layer via a first gate insulating film, and a metal layer provided on a side opposite to the resin substrate side of the first semiconductor layer via a first interlayer insulating film. The second thin film transistor includes a second semiconductor layer formed of an oxide semiconductor, and a second gate electrode provided on a side opposite to the resin substrate of the second semiconductor layer via a second gate insulating film.

公开(公告)号：US20250048836A1

公开(公告)日：2025-02-06

申请号：US18722590

申请日：2022-02-21

Applicant: Sharp Display Technology Corporation

Inventor： Tadayoshi MIYAMOTO ,  Sohtaroh TANAKA ,  Fumie YASHIRO

IPC: H10K59/121 ,  H01L27/12 ,  H10K59/12

Abstract: A display device includes a thin film transistor layer provided with a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first semiconductor layer and a first gate electrode. The second thin film transistor includes a second semiconductor layer and a second gate electrode. The first gate electrode includes a thick film electrode portion and a thin film electrode portion in such a manner as to overlap the thick film electrode portion and protrude from the thick film electrode portion toward at least one side in a channel length direction. The first semiconductor layer is provided with a low-concentration impurity region in such a manner as to overlap a portion of the thin film electrode portion protruding from the thick film electrode portion. A lower conductive layer is provided on a base substrate side of the second semiconductor layer.