公开(公告)号：US20240334741A1

公开(公告)日：2024-10-03

申请号：US18291047

申请日：2021-10-11

Applicant: Sharp Display Technology Corporation

Inventor： Tadayoshi MIYAMOTO ,  Sohtaroh TANAKA ,  Fumie YASHIRO

IPC: H10K59/121 ,  H10K59/80

CPC classification number: H10K59/1213 ,  H10K59/871

Abstract: A display device includes: a resin substrate, and a thin film transistor layer, wherein in the thin film transistor layer, a first thin film transistor and a second thin film transistor are provided for each of subpixels. The first thin film transistor includes a first semiconductor layer formed of polysilicon, a first gate electrode provided on the resin substrate side of the first semiconductor layer via a first gate insulating film, and a metal layer provided on a side opposite to the resin substrate side of the first semiconductor layer via a first interlayer insulating film. The second thin film transistor includes a second semiconductor layer formed of an oxide semiconductor, and a second gate electrode provided on a side opposite to the resin substrate of the second semiconductor layer via a second gate insulating film.

公开(公告)号：US20250048836A1

公开(公告)日：2025-02-06

申请号：US18722590

申请日：2022-02-21

Applicant: Sharp Display Technology Corporation

Inventor： Tadayoshi MIYAMOTO ,  Sohtaroh TANAKA ,  Fumie YASHIRO

IPC: H10K59/121 ,  H01L27/12 ,  H10K59/12

Abstract: A display device includes a thin film transistor layer provided with a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first semiconductor layer and a first gate electrode. The second thin film transistor includes a second semiconductor layer and a second gate electrode. The first gate electrode includes a thick film electrode portion and a thin film electrode portion in such a manner as to overlap the thick film electrode portion and protrude from the thick film electrode portion toward at least one side in a channel length direction. The first semiconductor layer is provided with a low-concentration impurity region in such a manner as to overlap a portion of the thin film electrode portion protruding from the thick film electrode portion. A lower conductive layer is provided on a base substrate side of the second semiconductor layer.

公开(公告)号：US20250116906A1

公开(公告)日：2025-04-10

申请号：US18883192

申请日：2024-09-12

Applicant: Sharp Display Technology Corporation

Inventor： Tadayoshi MIYAMOTO ,  Yoshinobu NAKAMURA ,  Toshihiro KANEKO ,  Sohtaroh TANAKA

IPC: G02F1/1368 ,  G02F1/1333 ,  H01L27/12 ,  H01L29/786

Abstract: A transistor includes a semiconductor portion extending in a first direction, a first electrode extending in a second direction intersecting the first direction and is disposed overlapping a portion of the semiconductor portion, a first insulating film that is interposed between the first electrode and the semiconductor portion, a second electrode that is connected to the semiconductor portion, and a third electrode that is connected to the semiconductor portion, in which the first insulating film includes a first thick portion and a second thick portion having a film thickness greater than that of the first thick portion, at least two of the first thick portions are disposed at intervals in the second direction at positions overlapping both the first electrode and the semiconductor portion, and the second thick portion is disposed to be interposed between the two first thick portions in the second direction at a position overlapping both the first electrode and the semiconductor portion.