公开(公告)号：US20250048836A1

公开(公告)日：2025-02-06

申请号：US18722590

申请日：2022-02-21

Applicant: Sharp Display Technology Corporation

Inventor： Tadayoshi MIYAMOTO ,  Sohtaroh TANAKA ,  Fumie YASHIRO

IPC: H10K59/121 ,  H01L27/12 ,  H10K59/12

Abstract: A display device includes a thin film transistor layer provided with a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first semiconductor layer and a first gate electrode. The second thin film transistor includes a second semiconductor layer and a second gate electrode. The first gate electrode includes a thick film electrode portion and a thin film electrode portion in such a manner as to overlap the thick film electrode portion and protrude from the thick film electrode portion toward at least one side in a channel length direction. The first semiconductor layer is provided with a low-concentration impurity region in such a manner as to overlap a portion of the thin film electrode portion protruding from the thick film electrode portion. A lower conductive layer is provided on a base substrate side of the second semiconductor layer.

公开(公告)号：US20240276795A1

公开(公告)日：2024-08-15

申请号：US18564814

申请日：2021-07-13

Applicant: Sharp Display Technology Corporation

Inventor： Tadayoshi MIYAMOTO

IPC: H10K59/124 ,  G09G3/3233

CPC classification number: H10K59/124 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861

Abstract: A first TFT includes: a first semiconductor layer formed of polysilicon; and a first gate electrode provided to the first semiconductor layer toward a resin substrate through a first gate insulating film. A second TFT includes: a second semiconductor layer formed of oxide semiconductor and positioned more distant from the resin substrate than the first semiconductor layer; and a second gate electrode provided to the second semiconductor layer across from the resin substrate through a second gate insulating film.

公开(公告)号：US20230244114A1

公开(公告)日：2023-08-03

申请号：US18095821

申请日：2023-01-11

Applicant: Sharp Display Technology Corporation

Inventor： Tadayoshi MIYAMOTO ,  Yoshitaka KOYAMA ,  Yoshinobu NAKAMURA ,  Toshihiro KANEKO

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/136286 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124

Abstract: An active matrix substrate includes, in each pixel region, a pixel TFT of an oxide semiconductor layer having source and drain regions, a first insulating layer disposed on top of the oxide semiconductor layer, an extraction electrode, disposed on top of the first insulating layer, that includes a transparent conductive film, and a pixel electrode connected to the extraction electrode. The first insulating layer includes first and second contact holes located above the source and drain regions, respectively. Part of a source bus line overlaps part of the source region and is connected to the source region via the first contact hole. The extraction electrode is connected to the drain region via the second contact hole. Shapes of bottoms of the first and second contact holes are different from each other, and the shape of the bottom of the second contact hole includes two orthogonal sides.

公开(公告)号：US20250116906A1

公开(公告)日：2025-04-10

申请号：US18883192

申请日：2024-09-12

Applicant: Sharp Display Technology Corporation

Inventor： Tadayoshi MIYAMOTO ,  Yoshinobu NAKAMURA ,  Toshihiro KANEKO ,  Sohtaroh TANAKA

IPC: G02F1/1368 ,  G02F1/1333 ,  H01L27/12 ,  H01L29/786

Abstract: A transistor includes a semiconductor portion extending in a first direction, a first electrode extending in a second direction intersecting the first direction and is disposed overlapping a portion of the semiconductor portion, a first insulating film that is interposed between the first electrode and the semiconductor portion, a second electrode that is connected to the semiconductor portion, and a third electrode that is connected to the semiconductor portion, in which the first insulating film includes a first thick portion and a second thick portion having a film thickness greater than that of the first thick portion, at least two of the first thick portions are disposed at intervals in the second direction at positions overlapping both the first electrode and the semiconductor portion, and the second thick portion is disposed to be interposed between the two first thick portions in the second direction at a position overlapping both the first electrode and the semiconductor portion.

公开(公告)号：US20240334741A1

公开(公告)日：2024-10-03

申请号：US18291047

申请日：2021-10-11

Applicant: Sharp Display Technology Corporation

Inventor： Tadayoshi MIYAMOTO ,  Sohtaroh TANAKA ,  Fumie YASHIRO

IPC: H10K59/121 ,  H10K59/80

CPC classification number: H10K59/1213 ,  H10K59/871

Abstract: A display device includes: a resin substrate, and a thin film transistor layer, wherein in the thin film transistor layer, a first thin film transistor and a second thin film transistor are provided for each of subpixels. The first thin film transistor includes a first semiconductor layer formed of polysilicon, a first gate electrode provided on the resin substrate side of the first semiconductor layer via a first gate insulating film, and a metal layer provided on a side opposite to the resin substrate side of the first semiconductor layer via a first interlayer insulating film. The second thin film transistor includes a second semiconductor layer formed of an oxide semiconductor, and a second gate electrode provided on a side opposite to the resin substrate of the second semiconductor layer via a second gate insulating film.

公开(公告)号：US20240292676A1

公开(公告)日：2024-08-29

申请号：US18574429

申请日：2021-08-18

Applicant: Sharp Display Technology Corporation

Inventor： Tadayoshi MIYAMOTO ,  Yoshinobu NAKAMURA ,  Toshihiro KANEKO

IPC: H10K59/124 ,  H10K59/12

CPC classification number: H10K59/124 ,  H10K59/1201

Abstract: A first TFT includes: a first semiconductor layer of a polysilicon; and a first gate electrode on the first semiconductor layer via a first gate insulating film. A second TFT includes: a first conductive layer and a second conductive layer made of the same material, and provided in the same layer, as the first semiconductor layer; a second semiconductor layer of an oxide semiconductor on the first conductive layer and the second conductive layer; and a second gate electrode on the second semiconductor layer via the second gate insulating film.