公开(公告)号：US20230221605A1

公开(公告)日：2023-07-13

申请号：US18096056

申请日：2023-01-12

Applicant: Sharp Display Technology Corporation

Inventor： Tetsuo KIKUCHI ,  Masahiko SUZUKI ,  Setsuji NISHIMIYA ,  Hitoshi TAKAHATA ,  Takuya WATANABE ,  Tohru DAITOH

IPC: G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/133 ,  G09G3/36

CPC classification number: G02F1/136286 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/78648 ,  H01L29/7869 ,  G02F1/1368 ,  G02F1/13306 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2300/08 ,  G09G2310/0291

Abstract: A semiconductor device including a substrate, and a first circuit supported by the substrate and including a plurality of TFTs including a first TFT, wherein the first TFT includes a semiconductor layer, a lower gate electrode located on a side of the substrate of the semiconductor layer and overlapping a part of the semiconductor layer via a lower gate insulating layer, and an upper gate electrode located on a side opposite to the substrate of the semiconductor layer and overlapping a part of the semiconductor layer via an upper gate insulating layer, one of the lower gate electrode and the upper gate electrode is a first gate electrode and the other is a second gate electrode, a first signal is supplied to the first gate electrode, and a second signal different from the first signal is supplied to the second gate electrode, the first TFT has a threshold voltage between a high-level potential and a low-level potential of the first signal and between a high-level potential and a low-level potential of the second signal, and a period during which the first signal is at the high-level potential and a period during which the second signal is at the high-level potential do not overlap each other.