公开(公告)号：US20180110416A1

公开(公告)日：2018-04-26

申请号：US15567380

申请日：2016-04-06

Applicant: Sharp Kabushiki Kaisha

Inventor： Ryohichi MASUDA ,  Hidenori KAWANISHI

IPC: A61B5/01 ,  A61B5/00

CPC classification number: A61B5/015 ,  A61B5/0035 ,  A61B5/0075 ,  A61B5/0077 ,  A61B5/4842 ,  A61B5/7275 ,  A61B5/746 ,  A61B2560/0252 ,  A61B2576/00 ,  G01J5/0025 ,  G01J5/026 ,  G01J5/0806 ,  G01J5/0812 ,  G01J5/10 ,  G01J2005/0077 ,  G01J2005/0085 ,  G01J2005/123

Abstract: A monitoring system at least includes a measuring device that measures a temperature distribution based on infrared light and a monitoring device that measures image information based on visible light, in which the monitoring device includes an acquisition unit that acquires attribute information of a monitored target extracted based on the image information and fever information of the monitored target from the temperature distribution in a time series and an analysis unit that analyzes the attribute information and a change of the fever information and predicts a transition of the fever information based on the analysis result.

公开(公告)号：US20180113029A1

公开(公告)日：2018-04-26

申请号：US15567382

申请日：2016-04-05

Applicant: Sharp Kabushiki Kaisha

Inventor： Ryohichi MASUDA ,  Hidenori KAWANISHI

IPC: G01J5/08 ,  A61B5/01

CPC classification number: G01J5/0846 ,  A61B5/0064 ,  A61B5/01 ,  A61B5/015 ,  G01J5/0025 ,  G01J5/026 ,  G01J5/0806 ,  G01J5/0809 ,  G01J5/0831 ,  G01J5/0859 ,  G01J5/0881 ,  G01J5/12 ,  G01J2005/0077

Abstract: An integrated circuit includes a first detection element that detects a temperature of an object based on infrared light reflected from the object and a second detection element that detects an image of the object based on visible light reflected from the object on the same substrate.

公开(公告)号：US20160172396A1

公开(公告)日：2016-06-16

申请号：US14906661

申请日：2014-06-23

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Ryohichi MASUDA

IPC: H01L27/146 ,  H01L29/78 ,  H01L31/117 ,  H01L29/06

CPC classification number: H01L27/14614 ,  H01L27/14609 ,  H01L27/14616 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14663 ,  H01L27/14692 ,  H01L29/0649 ,  H01L29/78391 ,  H01L29/78603 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78648 ,  H01L31/117

Abstract: Variation in threshold voltages in a device operation is reduced.An insulator layer which is disposed to be opposed to a channel region 41 of a MOS transistor and is formed to have a laminated structure of a silicon nitride film 83 and a silicon oxide film 83 and an inverted signal input unit which inputs a signal obtained by inverting an input signal inputted into a source region 43 of a MOS transistor into a channel region 41 are provided and the inverted signal input unit includes another gate electrode 82 which is formed on an extended portion of the channel region 41 of the gate electrode 81 in a manner to be adjacent to the gate electrode 81 of the MOS transistor and a CMOS circuit 80 which inverts an input signal inputted into the source region 43 of the MOS transistor in accordance with an input value of the input signal and inputs a signal obtained through inversion in the CMOS circuit 80 into another gate electrode 82.

Abstract translation: 器件操作中阈值电压的变化减小。 绝缘体层，被设置为与MOS晶体管的沟道区域41相对，并且形成为具有氮化硅膜83和氧化硅膜83的叠层结构，反相信号输入单元输入由 将输入到MOS晶体管的源极区域43的输入信号反相到沟道区域41，并且反相信号输入单元包括形成在栅极电极81的沟道区域41的延伸部分上的另一个栅电极82 与MOS晶体管的栅电极81相邻的方式和CMOS电路80，其根据输入信号的输入值反转输入到MOS晶体管的源极区43的输入信号，并输入通过 将CMOS电路80中的反相转换成另一栅极电极82。