中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

25 records (took 0.013 seconds)

    METHOD FOR READING DATA FROM FLASH MEMORY AND RELATED MEMORY CONTROLLER AND STORAGE SYSTEM THEREOF
    1.
    发明公开
    METHOD FOR READING DATA FROM FLASH MEMORY AND RELATED MEMORY CONTROLLER AND STORAGE SYSTEM THEREOF 审中-公开

    公开(公告)号：US20240311044A1

    公开(公告)日：2024-09-19

    申请号：US18120973

    申请日：2023-03-13

    Applicant: Silicon Motion, Inc.

    Inventor： Chia-Chi Liang ,  Cheng-Yu Tsai

    IPC: G06F3/06

    CPC classification number: G06F3/0656 ,  G06F3/0622 ,  G06F3/0679

    Abstract: A method for reading data from a flash memory is provided. The method comprises: determining whether a host device is requesting a sequential read access to the flash memory; prior to receiving a first host read command issued by the host device, performing a read-ahead operation to read data from the flash memory according to a read-ahead start logical block address (LBA) if the host device is requesting the sequential read access to the flash memory; and storing the data that is read through the read-ahead operation in a read-ahead buffer; and in response to receiving a first host read command issued by the host device, sending a portion or all of data that is read through the read-ahead operation to the host device if a start LBA of the first host read command corresponds to one of start LBAs of data that is stored in the read-ahead buffer.

    METHOD FOR PERFORMING ACCESS MANAGEMENT IN A MEMORY DEVICE, ASSOCIATED MEMORY DEVICE AND CONTROLLER THEREOF, AND ASSOCIATED ELECTRONIC DEVICE
    2.
    发明申请
    METHOD FOR PERFORMING ACCESS MANAGEMENT IN A MEMORY DEVICE, ASSOCIATED MEMORY DEVICE AND CONTROLLER THEREOF, AND ASSOCIATED ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20190107964A1

    公开(公告)日：2019-04-11

    申请号：US15859712

    申请日：2018-01-01

    Applicant: Silicon Motion Inc.

    Inventor： Chia-Chi Liang ,  Jie-Hao Lee

    IPC: G06F3/06 ,  G06F12/02 ,  G06F12/14

    Abstract: A method for performing access management in a memory device, the associated memory device and the controller thereof, and the associated electronic device are provided. The method may include: receiving a host command and a logical address from a host device; performing a checking operation to obtain a checking result, for determining whether to load a logical-to-physical (L2P) table from the NV memory to a random access memory (RAM) of the memory device; reading the target data and associated metadata from the NV memory, wherein a latest version of the L2P table is available in the RAM when reading the target data from the NV memory is performed; and checking whether a recorded logical address within the metadata and the logical address received from the host device are equivalent to each other, to control whether to send the target data to the host device.

    Method of managing garbage collection operation in flash memory based on types of source blocks and related memory controller and storage system
    8.
    发明授权
    Method of managing garbage collection operation in flash memory based on types of source blocks and related memory controller and storage system 有权

    公开(公告)号：US12141060B1

    公开(公告)日：2024-11-12

    申请号：US18144864

    申请日：2023-05-09

    Applicant: Silicon Motion, Inc.

    Inventor： Chia-Chi Liang ,  Cheng-Yu Tsai

    IPC: G06F12/02

    Abstract: A method of managing a garbage collection (GC) operation on a flash memory includes: dividing a GC operation into a plurality of partial GC operations; determining a default partial GC operation time period for each partial GC operation; determining a partial GC intensity according to at least a basic adjustment factor and an amplification factor; determining the basic adjustment factor according to a type of one or more source blocks corresponding to the GC operation; determining the amplification factor according to a percentage of invalid pages in the one or more source blocks corresponding to the GC operation; and performing the plurality of partial GC operations according to the partial GC intensity and the default partial GC operation time period.

    METHOD FOR MANAGING FLASH MEMORY MODULE AND ASSOCIATED FLASH MEMORY CONTROLLER AND ELECTRONIC DEVICE
    9.
    发明申请
    METHOD FOR MANAGING FLASH MEMORY MODULE AND ASSOCIATED FLASH MEMORY CONTROLLER AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20190213137A1

    公开(公告)日：2019-07-11

    申请号：US16022714

    申请日：2018-06-29

    Applicant: Silicon Motion Inc.

    Inventor： Chien-Cheng Lin ,  Chia-Chi Liang ,  Jie-Hao Lee

    IPC: G06F12/10

    CPC classification number: G06F12/10 ,  G06F2212/1044 ,  G06F2212/7201 ,  G06F2212/7205

    Abstract: The present invention provides a method for managing a flash memory module, wherein the method comprises: reading a logical address to physical address (L2P) mapping table from the flash memory module; compressing the L2P mapping table to generate a compressed mapping table, wherein the compressed mapping table records a reference physical address and whether a corresponding physical address of each logical address is the reference physical address plus an offset value; and when receiving a read command asking for reading data corresponding to a specific logical address, referring to the compressed mapping table to determine a specific physical address corresponding to the specific logical address, and reading the data from the flash memory module according to the specific physical address.

Patent Agency Ranking