公开(公告)号：US20150004092A1

公开(公告)日：2015-01-01

申请号：US14489903

申请日：2014-09-18

Applicant: Smoltek AB

Inventor： Jonas T. Berg ,  Vincent Desmaris ,  Mohammad Shafiqul Kabir ,  Muhammad Amin Saleem ,  David Brud

IPC: C01B31/02

CPC classification number: C23C16/26 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  C23C16/503 ,  G02B6/26 ,  H01B13/0026 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/4871 ,  H01L21/76802 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/3677 ,  H01L23/3737 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/66439 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

公开(公告)号：US09114993B2

公开(公告)日：2015-08-25

申请号：US14489903

申请日：2014-09-18

Applicant: Smoltek AB

Inventor： Jonas T. Berg ,  Vincent Desmaris ,  Mohammad Shafiqul Kabir ,  Muhammad Amin Saleem ,  David Brud

IPC: H01L23/48 ,  C01B31/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/768 ,  H01L29/06 ,  H01L29/66 ,  H01L23/498 ,  H01L21/02

CPC classification number: C23C16/26 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  C23C16/503 ,  G02B6/26 ,  H01B13/0026 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/4871 ,  H01L21/76802 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/3677 ,  H01L23/3737 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/66439 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

Abstract translation: 公开了一种制造一种或多种纳米结构的方法，所述方法包括：在衬底的上表面上沉积导电层; 在导电层上沉积图案化的催化剂层; 在催化剂层上生长一个或多个纳米结构; 并且选择性地去除所述一个或多个纳米结构之间和周围的导电层。 还公开了一种包括衬底的器件，其中衬底包括由一个或多个绝缘区域隔开的一个或多个暴露的金属岛; 设置在所述基板上的导电助垫，其覆盖所述一个或多个暴露的金属岛或绝缘区域中的至少一些; 设置在导电助听器上的催化剂层; 以及设置在催化剂层上的一个或多个纳米结构。