Ultra-High Frequency MEMS Resonators with First and Second Order Temperature-Induced Frequency Drift Compensation

    公开(公告)号:US20230264946A1

    公开(公告)日:2023-08-24

    申请号:US18166838

    申请日:2023-02-09

    Abstract: There is provided a MEMS resonator comprising a support structure, a distributed cross-sectional resonator element with a particular eigenmode, at least one anchor coupling the distributed cross-sectional resonator element to the support structure, at least one drive electrode for actuating the particular eigenmode, and at least one sense electrode for sensing the particular eigenmode. The particular eigenmode is defined by a propagating series of modes, such as a plurality of Lamé modes. The MEMS resonator may be homogenously doped with one of N-type or P-type dopants, such that a second order temperature coefficient of frequency of the distributed cross-sectional resonator element is about zero. Additionally, the first order temperature coefficient of frequency may be reduced to about zero by modifying the ratio of elongation of the distributed cross-sectional resonator element or by modifying the material composition of the distributed cross-sectional resonator element.

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