公开(公告)号：US20230131902A1

公开(公告)日：2023-04-27

申请号：US17973896

申请日：2022-10-26

Applicant: Stathera IP Holdings Inc.

Inventor： Anosh Daruwalla ,  Reuble Mathew

IPC: B81B7/02

Abstract: An example silicon MEMS resonator device includes a support structure, a resonator element with at least one associated eigenmode of vibration, at least one anchor coupling the resonator element to the support structure, at least one driving electrode, and at least one sense electrode. The resonator element is homogeneously doped with N-type or P-type dopants to a doping concentration that causes a closely temperature-compensated mode in which (i) an absolute value of a first order temperature coefficient of frequency of the resonator element is reduced to a first value below a threshold value and (ii) an absolute value of a second order temperature coefficient of frequency of the resonator element is reduced to about zero. Further, a geometry of the resonator element is chosen such that the absolute value of the first order temperature coefficient of frequency is further reduced to a second value smaller than the first value.

公开(公告)号：US20240294372A1

公开(公告)日：2024-09-05

申请号：US18647923

申请日：2024-04-26

Applicant: Stathera IP Holdings Inc.

Inventor： Anosh Daruwalla ,  Reuble Mathew

IPC: B81B3/00 ,  B81C1/00 ,  H03H9/02

CPC classification number: B81B3/0081 ,  B81C1/0069 ,  H03H9/02448 ,  B81B2201/0271 ,  B81B2203/0307 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/013 ,  H03H2009/02251

Abstract: A MEMS resonator device includes: (i) a support structure, (ii) a resonator element doped with at least one of N-type or P-type dopants, wherein a doping concentration of the at least one of N-type or P-type dopants causes a closely temperature-compensated mode in which (a) an absolute value of a first order temperature coefficient of frequency of the resonator element is reduced to a first value below a threshold value and (b) an absolute value of a second order temperature coefficient of frequency of the resonator element is reduced to about zero, and wherein an anchor decoupler region formed on the resonator element causes the absolute value to be further reduced to a second value, and (iii) at least one anchor coupling the resonator element to the support structure, wherein the anchor decoupler region is formed on the resonator element at least partially surrounding the at least one anchor.

公开(公告)号：US20230264946A1

公开(公告)日：2023-08-24

申请号：US18166838

申请日：2023-02-09

Applicant: Stathera IP Holdings Inc.

Inventor： Anosh Daruwalla ,  Siddharth Kumanduri

IPC: B81B3/00 ,  B81C99/00

CPC classification number: B81B3/0018 ,  B81C99/006 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/0307 ,  B81B2203/04

Abstract: There is provided a MEMS resonator comprising a support structure, a distributed cross-sectional resonator element with a particular eigenmode, at least one anchor coupling the distributed cross-sectional resonator element to the support structure, at least one drive electrode for actuating the particular eigenmode, and at least one sense electrode for sensing the particular eigenmode. The particular eigenmode is defined by a propagating series of modes, such as a plurality of Lamé modes. The MEMS resonator may be homogenously doped with one of N-type or P-type dopants, such that a second order temperature coefficient of frequency of the distributed cross-sectional resonator element is about zero. Additionally, the first order temperature coefficient of frequency may be reduced to about zero by modifying the ratio of elongation of the distributed cross-sectional resonator element or by modifying the material composition of the distributed cross-sectional resonator element.