公开(公告)号：US20230422411A1

公开(公告)日：2023-12-28

申请号：US17899625

申请日：2022-08-31

Applicant: Subtron Technology Co., Ltd.

Inventor： Chung Ying Lu

IPC: H05K3/46 ,  H05K1/05 ,  H05K3/00

CPC classification number: H05K3/4644 ,  H05K1/056 ,  H05K3/0035 ,  H05K2203/0323 ,  H05K2201/0959

Abstract: A substrate structure includes a metal substrate, an insulating material, at least one first dielectric layer, and at least one first patterned circuit layer. The metal substrate has a first surface and a second surface opposite to each other and multiple through holes penetrating the metal substrate and connecting the first surface and the second surface. The insulating material fills the through holes and is aligned with the first surface and the second surface. The first dielectric layer is disposed on the first surface and the insulating material, and has multiple first openings. The first openings partially expose the metal substrate. The material of the first dielectric layer includes aluminum nitride or silicon carbide. The first patterned circuit layer is disposed on the first dielectric layer, fills the first openings, and connected to the metal substrate. The first patterned circuit layer partially exposes the first dielectric layer.

公开(公告)号：US20220157674A1

公开(公告)日：2022-05-19

申请号：US17348741

申请日：2021-06-15

Applicant: Subtron Technology Co., Ltd.

Inventor： Chung Ying Lu

IPC: H01L23/13 ,  H01L23/14 ,  H01L23/15 ,  H01L23/498

Abstract: A substrate structure includes a substrate, a first metal layer, a second metal layer, and a third metal layer. The substrate has a first surface and a second surface opposite to each other and at least one through hole. The first metal layer is disposed on the first surface of the substrate. The second metal layer is disposed on the second surface of the substrate. The third metal layer is disposed on an inner wall of the at least one through hole of the substrate and connects the first metal layer and the second metal layer. The third metal layer and a portion of the first metal layer define at least one containing cavity, and the at least one containing cavity is configured to contain solder to fix the substrate structure onto an external circuit.

公开(公告)号：US20250089162A1

公开(公告)日：2025-03-13

申请号：US18490746

申请日：2023-10-19

Applicant: Subtron Technology Co., Ltd.

Inventor： Chung Ying Lu ,  Po-Wen Cheng

IPC: H05K1/05 ,  H05K1/02

Abstract: A substrate structure includes a substrate, an insulation filling structure, a chip, a first circuit layer, a second circuit layer and a conductive connector. The substrate has a first surface and a second surface opposite to each other, wherein the substrate is a thermally and electrically conductive material. The insulation filling structure is disposed in the substrate to separate the substrate into a plurality of regions isolated from each other. The chip is disposed on and in direct contact with the substrate. The first circuit layer is disposed over the first surface of the substrate. The second circuit layer is disposed over the second surface of the substrate. The conductive connector penetrates through the insulation filling material and is electrically connected with the first circuit layer and the second circuit layer.

公开(公告)号：US20230403826A1

公开(公告)日：2023-12-14

申请号：US17860076

申请日：2022-07-07

Applicant: Subtron Technology Co., Ltd.

Inventor： Chung Ying Lu ,  Tzu-Shih Shen ,  Chien-Hung Wu

IPC: H05K7/20 ,  H05K1/03 ,  H05K1/02

CPC classification number: H05K7/20409 ,  H05K1/0306 ,  H05K1/0212

Abstract: A heat dissipation substrate includes heat dissipation blocks, an insulation filling structure, a first insulating layer, and a first circuit layer. Each heat dissipation block includes a first surface and a second surface opposite to the first surface. The insulation filling structure is disposed between the heat dissipation blocks to laterally connect the heat dissipation blocks. A first insulating surface of the insulation filling structure is substantially coplanar with the first surface of the heat dissipation block. A second insulating surface of the insulation filling structure is substantially coplanar with the second surface of the heat dissipation block. The first insulating layer is disposed on the first surface. The first circuit layer is disposed on the first insulating layer and penetrates the first insulating layer to be connected with the heat dissipation blocks. A thickness of the heat dissipation blocks is greater than a thickness of the first circuit layer.