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    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT MODULE HAVING THE SAME
    2.
    发明申请
    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT MODULE HAVING THE SAME 有权

    公开(公告)号：US20220406530A1

    公开(公告)日：2022-12-22

    申请号：US17777515

    申请日：2021-03-22

    Applicant: TDK Corporation

    Inventor： Daiki ISHII ,  Eiko TAMURA

    IPC: H01G4/33 ,  H01G4/012 ,  H01G4/232 ,  H01G2/06

    Abstract: To provide a thin film capacitor capable of achieving low impedance over a wide frequency band. A thin film capacitor includes: a capacitor layer having a structure in which internal electrode layers and dielectric layers are alternately stacked; a redistribution layer stacked on the capacitor layer; and external terminals. The redistribution layer includes a wiring pattern connecting the external terminal and the internal electrode layers and a wiring pattern connecting the external terminal and the internal electrode layers. A distance between first and second via conductors is smaller than distance between second and third via conductors and is smaller than a distance between first and fourth via conductors.

    THIN-FILM CAPACITOR
    3.
    发明申请
    THIN-FILM CAPACITOR 审中-公开

    公开(公告)号：US20190304701A1

    公开(公告)日：2019-10-03

    申请号：US16360405

    申请日：2019-03-21

    Applicant: TDK CORPORATION

    Inventor： Daiki ISHII ,  Kazuhiro YOSHIKAWA ,  Koichi TSUNODA ,  Mitsuhiro TOMIKAWA ,  Junki NAKAMOTO ,  Kenichi YOSHIDA

    IPC: H01G4/33 ,  H01G4/12 ,  H01G4/008

    Abstract: A thin-film capacitor satisfies a relationship of CTE1>CTE2>CTE3 regarding a linear expansion coefficient CTE1 of a base, a linear expansion coefficient CTE2 of a capacitance unit, and a linear expansion coefficient CTE3 of a barrier layer. The inventors have newly found that in a case in which such a relationship is satisfied, when a temperature falls from a deposition temperature, cracking occurring in the capacitance unit of the thin-film capacitor is prevented, and cracking occurring in the barrier layer is also prevented.

    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME
    8.
    发明公开
    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME 审中-公开

    公开(公告)号：US20230260698A1

    公开(公告)日：2023-08-17

    申请号：US18012834

    申请日：2020-12-24

    Applicant: TDK Corporation

    Inventor： Daiki ISHII ,  Yoshihiko YANO ,  Yuki YAMASHITA ,  Kenichi YOSHIDA ,  Tetsuhiro TAKAHASHI

    IPC: H01G4/01 ,  H01L25/16 ,  H01G4/33

    CPC classification number: H01G4/01 ,  H01L25/16 ,  H01G4/33 ,  H01L24/16

    Abstract: To provide a thin film capacitor having high flexibility. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The particle diameter of crystal at a non-roughened center part of the metal foil is less than 15 μm in the planar direction and less than 5 μm in the thickness direction. This can not only enhance the flexibility of the metal foil to reduce a short-circuit failure in a state where the thin film capacitor is incorporated in a multilayer substrate but also enhance positional accuracy.

    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME
    9.
    发明公开
    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME 审中-公开

    公开(公告)号：US20230253446A1

    公开(公告)日：2023-08-10

    申请号：US18012809

    申请日：2020-12-24

    Applicant: TDK Corporation

    Inventor： Yoshihiko YANO ,  Daiki ISHII ,  Kenichi YOSHIDA ,  Yuki YAMASHITA

    IPC: H01G4/33 ,  H01G4/008

    CPC classification number: H01L28/75 ,  H01L28/84 ,  H01G4/008 ,  H01G4/33

    Abstract: To provide a thin film capacitor having high adhesion performance with respect to a multilayer substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. A height of the first electrode layer is lower than a height of the second electrode layer. This enhances adhesion performance when the thin film capacitor is embedded in a multilayer substrate and improves ESR characteristics.

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