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    PIEZOELECTRIC COMPOSITION AND PIEZOELECTRIC DEVICE
    1.
    发明申请
    PIEZOELECTRIC COMPOSITION AND PIEZOELECTRIC DEVICE 有权
    压电组合物和压电器件

    公开(公告)号：US20160141486A1

    公开(公告)日：2016-05-19

    申请号：US14201515

    申请日：2014-03-07

    Applicant: TDK CORPORATION

    Inventor： Taku MASAI ,  Masamitsu HAEMORI ,  Masahito FURUKAWA ,  Junichi YAMAZAKI ,  Kouhei OHHASHI

    IPC: H01L41/187 ,  H01L41/08

    CPC classification number: H01L41/1878 ,  C04B35/475 ,  H01L41/0805 ,  H01L41/316

    Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.

    Abstract translation: 本发明提供一种压电组合物，其含有主要成分为钙钛矿型氧化物，其由不含Pb的通式ABO3表示，具有含有Bi，Na，K的A位点和含有Ti的B位点。 Ti部分被选自Mn，Cr，Fe和Co中的至少一种的过渡金属元素Me所取代。钙钛矿型氧化物中Bi和过渡金属元素Me的含量为 主要组分按Biu1MeO3计为6摩尔％至43摩尔％。

    DIELECTRIC FILM, DIELECTRIC ELEMENT, AND ELECTRONIC CIRCUIT BOARD
    2.
    发明申请
    DIELECTRIC FILM, DIELECTRIC ELEMENT, AND ELECTRONIC CIRCUIT BOARD 有权

    公开(公告)号：US20210130187A1

    公开(公告)日：2021-05-06

    申请号：US17071474

    申请日：2020-10-15

    Applicant: TDK CORPORATION

    Inventor： Toshio ASAHI ,  Masamitsu HAEMORI ,  Hitoshi SAITA

    IPC: C01G23/00 ,  C23C16/40 ,  C23C16/06 ,  C23C16/56 ,  H01G4/10 ,  H05K1/18 ,  H01G4/33

    Abstract: A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr1-xCax)yTiO3. 0.40≤x≤0.90 and 0.90≤y≤1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2θ of 32° or more and 34° or less to an intensity of a diffraction peak appearing at a diffraction angle 2θ of 46° or more and 48° or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-Kα ray as an X-ray source is 3.00 or more.

    DIELECTRIC THIN FILM, DIELECTRIC ELEMENT AND ELECTRONIC CIRCUIT BOARD
    4.
    发明申请
    DIELECTRIC THIN FILM, DIELECTRIC ELEMENT AND ELECTRONIC CIRCUIT BOARD 有权

    公开(公告)号：US20210292244A1

    公开(公告)日：2021-09-23

    申请号：US17189859

    申请日：2021-03-02

    Applicant: TDK CORPORATION

    Inventor： Toshio ASAHI ,  Masamitsu HAEMORI ,  Hitoshi SAITA ,  Masahito FURUKAWA

    IPC: C04B35/58 ,  H01G4/12 ,  H01G4/008

    Abstract: A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

    DIELECTRIC MEMBRANE AND DIELECTRIC ELEMENT
    7.
    发明申请
    DIELECTRIC MEMBRANE AND DIELECTRIC ELEMENT 审中-公开

    公开(公告)号：US20190304688A1

    公开(公告)日：2019-10-03

    申请号：US16359824

    申请日：2019-03-20

    Applicant: TDK CORPORATION

    Inventor： Saori TAKAHASHI ,  Masahito FURUKAWA ,  Masamitsu HAEMORI ,  Hiroki UCHIYAMA ,  Wakiko SATO ,  Hitoshi SAITA

    IPC: H01G4/12 ,  H01G4/33

    Abstract: A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 and satisfies at least one of degree of orientation of (100) plane>degree of orientation of (110) plane and degree of orientation of (111) plane>degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

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