公开(公告)号：US20210014966A1

公开(公告)日：2021-01-14

申请号：US16916229

申请日：2020-06-30

Applicant: TDK CORPORATION

Inventor： Takaaki MORITA ,  Seiko KOMATSU ,  Seiichi TAJIMA ,  Wakiko SATO

IPC: H05K1/03 ,  H05K1/09 ,  H05K1/11 ,  H05K1/02 ,  H05K3/00

Abstract: A printed wiring board and the like in which local deviations of characteristics of a bamse member using a liquid crystal polymer are reduced. A printed wiring board uses a liquid crystal polymer having wiring formed on at least one surface as a bamse member, in which the bamse member has a degree of crystal orientation of the liquid crystal polymer of 0.3 or less in a plane direction.

公开(公告)号：US20210012961A1

公开(公告)日：2021-01-14

申请号：US17042523

申请日：2019-03-15

Applicant: TDK CORPORATION

Inventor： Shota SUZUKI ,  Nobuyuki OKUZAWA ,  Daisuke HIROSE ,  Shirou OOTSUKI ,  Wakiko SATO

IPC: H01G4/12 ,  H01B3/12 ,  H01G4/33 ,  H01G4/30 ,  C04B35/495 ,  C04B35/453

Abstract: A dielectric composition including a complex oxide containing bismuth, zinc, and niobium, includes a crystal phase formed of the complex oxide and having a pyrochlore type crystal structure, and an amorphous phase. When the complex oxide is represented by a composition formula BixZnyNbzO1.75+δ, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20≤y≤0.50, and 2/3≤x/z≤3/2.

公开(公告)号：US20210238037A1

公开(公告)日：2021-08-05

申请号：US17269698

申请日：2019-08-27

Applicant: TDK CORPORATION

Inventor： Kumiko YAMAZAKI ,  Wakiko SATO ,  Junichi YAMAZAKI

IPC: C01B21/082 ,  H01G4/33 ,  H01G4/12 ,  H01G4/30 ,  H05K1/16 ,  H01L49/02 ,  C01G35/00 ,  C23C14/06

Abstract: A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B—O—N oxynitride. When the A-B—O—N oxynitride is represented by the compositional formula AaBbOoNn, (o+n)/a

公开(公告)号：US20200312484A1

公开(公告)日：2020-10-01

申请号：US16819073

申请日：2020-03-14

Applicant: TDK Corporation

Inventor： Shirou OOTSUKI ,  Aiko TAKAHASHI ,  Wakiko SATO

IPC: H01B3/12 ,  H01G4/33 ,  H01G4/12 ,  H05K1/18 ,  C01G29/00

Abstract: This dielectric film is a dielectric film comprising an oxide having a perovskite structure. The oxide comprises (1) Bi, Na and Ti, (2) at least one of Ba and Ca, and (3) at least one element Ln selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb and Y. When ratios of the numbers of atoms of Bi, Ba and Ca to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide are represented by XBi, XBa and XCa, respectively, the ratios satisfy 0.2≤XBi/(XBa+XCa)≤5.

公开(公告)号：US20220059753A1

公开(公告)日：2022-02-24

申请号：US17274897

申请日：2019-09-11

Applicant: TDK Corporation ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Yusuke SATO ,  Mirai ISHIDA ,  Wakiko SATO ,  Hiroshi FUNAKUBO ,  Takao SHIMIZU ,  Miyu HASEGAWA ,  Keisuke ISHIHAMA

IPC: H01L41/187 ,  H01L41/08 ,  H01L41/316 ,  H01L41/319 ,  C04B35/475 ,  G11B5/127 ,  G01C19/5607 ,  G01L1/16 ,  B41J2/14

Abstract: Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.

公开(公告)号：US20190304688A1

公开(公告)日：2019-10-03

申请号：US16359824

申请日：2019-03-20

Applicant: TDK CORPORATION

Inventor： Saori TAKAHASHI ,  Masahito FURUKAWA ,  Masamitsu HAEMORI ,  Hiroki UCHIYAMA ,  Wakiko SATO ,  Hitoshi SAITA

IPC: H01G4/12 ,  H01G4/33

Abstract: A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 and satisfies at least one of degree of orientation of (100) plane>degree of orientation of (110) plane and degree of orientation of (111) plane>degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.