公开(公告)号：US20230246006A1

公开(公告)日：2023-08-03

申请号：US18162183

申请日：2023-01-31

Applicant: TDK CORPORATION

Inventor： Ryohei KASAI ,  Takashi WATANABE ,  Susumu TANIGUCHI ,  Tomohisa MITOSE ,  Yuhei HOTTA

IPC: H01L25/075 ,  H01L23/00

CPC classification number: H01L25/0753 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/05073 ,  H01L2224/05144 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/16503 ,  H01L2924/01327 ,  H01L2924/12041

Abstract: A joint structure, in which an electronic component and a wiring substrate are joined to each other, includes: a first layer being provided on one side of the electronic component and the wiring substrate, and being composed of a first metal containing Sn; a second layer being provided on the other side of the electronic component and the wiring substrate, and being composed of a second metal that forms an intermetallic compound with Sn; and a third layer being provided at a joint interface between the first layer and the second layer, and being composed of an intermetallic compound of the first metal and the second metal. An average thickness of the third layer is 0.1 μm or more to 0.5 μm or less.

公开(公告)号：US20230262905A1

公开(公告)日：2023-08-17

申请号：US18024383

申请日：2021-08-19

Applicant: TDK Corporation

Inventor： Ryohei KASAI ,  Masaki OIKAWA ,  Susumu TANIGUCHI ,  Kenichi KAWABATA

IPC: H05K3/34

CPC classification number: H05K3/3463

Abstract: A joint structure, in which an electronic component and a wiring substrate are joined to each other, includes: a base material of the electronic component; a base material of the wiring substrate; and a joint portion that includes at least an electrode of the electronic component and an electrode of the wiring substrate, and that joins the base material of the electronic component and the base material of the wiring substrate. The joint portion includes a material having an absorption coefficient of 2×10{circumflex over ( )}5 cm−1 or more for light of a wavelength of 250 to 1000 nm. The base material of at least one component of the electronic component and the wiring substrate consists of a material having an absorption coefficient of 1.5×10{circumflex over ( )}5 cm−1 or less for the light of a wavelength of 250 to 1000 nm.