INTEGRATED INFRARED SENSORS WITH OPTICAL ELEMENTS AND METHODS
    1.
    发明申请
    INTEGRATED INFRARED SENSORS WITH OPTICAL ELEMENTS AND METHODS 审中-公开
    集成红外传感器与光学元件和方法

    公开(公告)号:US20130043552A1

    公开(公告)日:2013-02-21

    申请号:US13656352

    申请日:2012-10-19

    Abstract: An infrared (IR) radiation sensor device (27) includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) temperature-sensitive elements connected within a dielectric stack (3) of the chip, the first temperature-sensitive element (7) being more thermally insulated from a substrate (2) than the second temperature-sensitive element (8). Bonding pads (28A) on the chip (1) are coupled to the first and second temperature-sensitive elements. Bump conductors (28) are bonded to the bonding pads (28A), respectively, for physically and electrically connecting the radiation sensor chip (1) to corresponding mounting conductors (23A). A diffractive optical element (21,22,23,31,32 or 34) is integrated with a back surface (25) of the radiation sensor chip (1) to direct IR radiation toward the first temperature-sensitive element (7).

    Abstract translation: 红外(IR)辐射传感器装置(27)包括集成电路辐射传感器芯片(1A),其包括连接在芯片的电介质堆叠(3)内的第一(7)和第二(8)温度敏感元件,第一温度 - 敏感元件(7)比第二温度敏感元件(8)比基底(2)更热绝缘。 芯片(1)上的接合焊盘(28A)耦合到第一和第二温度敏感元件。 凸起导体(28)分别结合到接合焊盘(28A),用于将辐射传感器芯片(1)物理地和电气地连接到相应的安装导体(23A)。 衍射光学元件(21,22,23,31,32或34)与辐射传感器芯片(1)的背表面(25)成一体,以将IR辐射引向第一温度敏感元件(7)。

    INFRARED SENSOR STRUCTURE AND METHOD
    2.
    发明申请
    INFRARED SENSOR STRUCTURE AND METHOD 审中-公开
    红外传感器结构与方法

    公开(公告)号:US20140131577A1

    公开(公告)日:2014-05-15

    申请号:US14073636

    申请日:2013-11-06

    Abstract: A radiation sensor (27) includes a radiation sensor chip (1) including first (7) and second (8) thermopile junctions connected to form a thermopile (7,8). The first thermopile junction is disposed in a floating portion of a dielectric membrane (3) thermally insulated from a silicon substrate (2) of the chip, and the second thermopile junction is disposed in the dielectric membrane directly adjacent to the substrate. Bump conductors (28) are bonded to corresponding bonding pads (28A) coupled to the thermopile (7,8) to physically and electrically connect the chip to conductors on a printed circuit board (23). The silicon substrate transmits infrared radiation to the thermopile while blocking visible light.

    Abstract translation: 辐射传感器(27)包括辐射传感器芯片(1),其包括连接以形成热电堆(7,8)的第一(7)和第二(8)热电堆。 第一热电堆接头设置在与芯片的硅衬底(2)热绝缘的电介质膜(3)的浮动部分中,并且第二热电堆接头设置在与衬底直接相邻的电介质膜中。 凸起导体(28)被接合到耦合到热电堆(7,8)的相应接合焊盘(28A),以将芯片物理地和电连接到印刷电路板(23)上的导体。 硅衬底将红外辐射传输到热电堆上,同时阻挡可见光。

    Infrared sensor structure and method

    公开(公告)号:US09417133B2

    公开(公告)日:2016-08-16

    申请号:US14073636

    申请日:2013-11-06

    Abstract: A radiation sensor (27) includes a radiation sensor chip (1) including first (7) and second (8) thermopile junctions connected to form a thermopile (7,8). The first thermopile junction is disposed in a floating portion of a dielectric membrane (3) thermally insulated from a silicon substrate (2) of the chip, and the second thermopile junction is disposed in the dielectric membrane directly adjacent to the substrate. Bump conductors (28) are bonded to corresponding bonding pads (28A) coupled to the thermopile (7,8) to physically and electrically connect the chip to conductors on a printed circuit board (23). The silicon substrate transmits infrared radiation to the thermopile while blocking visible light.

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