公开(公告)号：US09349584B2

公开(公告)日：2016-05-24

申请号：US14396116

申请日：2013-04-22

Applicant: Tokyo Electron Limited

Inventor： Kippei Sugita ,  Hiroyuki Hashimoto ,  Muneo Harada

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  B05D1/36 ,  B05D1/00

CPC classification number: H01L21/02118 ,  B05D1/36 ,  B05D1/60 ,  B05D2490/50 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/52 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/76831 ,  H01L21/76898

Abstract: A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. Next, the insulating film is modified so as to have a barrier function by stopping the supply of the second source gas into the process chamber and continuously supplying the first source gas into the process chamber.

Abstract translation: 提供一种沉积薄膜的方法。 在该方法中，将待处理对象容纳在处理室中，并且由聚合物薄膜制成的绝缘膜通过提供由酸酐组成的第一源气体和 将由二胺构成的第二源气体排出到处理室中。 接下来，通过停止将第二源气体供应到处理室中并且将第一源气体连续地供应到处理室中，来改变绝缘膜以具有阻挡功能。

公开(公告)号：US11056349B2

公开(公告)日：2021-07-06

申请号：US16745720

申请日：2020-01-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi Yatsuda ,  Takashi Hayakawa ,  Hiroshi Okuno ,  Reiji Niino ,  Hiroyuki Hashimoto ,  Tatsuya Yamaguchi

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532

Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.

公开(公告)号：US10755971B2

公开(公告)日：2020-08-25

申请号：US16563007

申请日：2019-09-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya Yamaguchi ,  Reiji Niino ,  Hiroyuki Hashimoto ,  Syuji Nozawa ,  Makoto Fujikawa

IPC: H01L21/768 ,  H01L21/76 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/311 ,  H01L45/00

Abstract: A method of manufacturing a semiconductor device by performing a process on a substrate includes: forming a protective layer made of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate on which a protected film to be protected is formed; forming a sealing film at a first temperature lower than a second temperature at which the polymer is depolymerized so cover a portion where the protective layer is exposed; subsequently, subjecting the substrate to a treatment at a third temperature equal to or higher than the second temperature at which the polymer as the protective layer is depolymerized; subsequently, performing a treatment which causes damage to the protected film when the protective layer is not present; and after the performing a treatment which causes damage to the protected film, depolymerizing the polymer by heating the substrate.

公开(公告)号：US10446438B2

公开(公告)日：2019-10-15

申请号：US15936805

申请日：2018-03-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya Yamaguchi ,  Reiji Niino ,  Hiroyuki Hashimoto ,  Syuji Nozawa ,  Makoto Fujikawa

IPC: H01L21/768 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L45/00

Abstract: A method of manufacturing a semiconductor device by performing a process on a substrate includes: forming a protective layer made of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate on which a protected film to be protected is formed; forming a sealing film at a first temperature lower than a second temperature at which the polymer is depolymerized so cover a portion where the protective layer is exposed; subsequently, subjecting the substrate to a treatment at a third temperature equal to or higher than the second temperature at which the polymer as the protective layer is depolymerized; subsequently, performing a treatment which causes damage to the protected film when the protective layer is not present; and after the performing a treatment which causes damage to the protected film, depolymerizing the polymer by heating the substrate.

公开(公告)号：US20150087158A1

公开(公告)日：2015-03-26

申请号：US14396116

申请日：2013-04-22

Applicant: Tokyo Electron Limited

Inventor： Kippei Sugita ,  Hiroyuki Hashimoto ,  Muneo Harada

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/02118 ,  B05D1/36 ,  B05D1/60 ,  B05D2490/50 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/52 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/76831 ,  H01L21/76898

Abstract: A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. Next, the insulating film is modified so as to have a barrier function by stopping the supply of the second source gas into the process chamber and continuously supplying the first source gas into the process chamber.

Abstract translation: 提供一种沉积薄膜的方法。 在该方法中，将待处理对象容纳在处理室中，并且由聚合物薄膜制成的绝缘膜通过提供由酸酐组成的第一源气体和 将由二胺构成的第二源气体排出到处理室中。 接下来，通过停止将第二源气体供应到处理室中并且将第一源气体连续地供应到处理室中，来改变绝缘膜以具有阻挡功能。

公开(公告)号：US10960435B2

公开(公告)日：2021-03-30

申请号：US15915392

申请日：2018-03-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto Fujikawa ,  Reiji Niino ,  Hiroyuki Hashimoto ,  Tatsuya Yamaguchi ,  Syuji Nozawa

IPC: C23C16/455 ,  B05D1/00 ,  H01L21/02 ,  C23C16/44 ,  H01L21/67

Abstract: A film forming apparatus includes: a film forming gas discharge part; an exhaust port; a rotation mechanism; a heating part configured to heat the interior of a reaction container to a temperature lower than a temperature of a film forming gas discharged from the film forming gas discharge part; first gas discharge holes opened, in the film forming gas discharge part, toward a gas temperature reducing member so that the film forming gas is cooled by colliding with the gas temperature reducing member inside the reaction container before the film forming gas is supplied to substrates; and second gas discharge holes opened, in the film forming gas discharge part, in a direction differing from an opening direction of the first gas discharge holes so that the film forming gas does not collide with the gas temperature reducing member before the film forming gas is supplied to the substrates.

公开(公告)号：US10593556B2

公开(公告)日：2020-03-17

申请号：US15654307

申请日：2017-07-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi Yatsuda ,  Takashi Hayakawa ,  Hiroshi Okuno ,  Reiji Niino ,  Hiroyuki Hashimoto ,  Tatsuya Yamaguchi

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532

Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.