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公开(公告)号:US20200273763A1
公开(公告)日:2020-08-27
申请号:US15930696
申请日:2020-05-13
Applicant: TOPPAN PRINTING CO.,LTD.
Inventor: Tetsuyuki TSUCHIDA
Abstract: A glass core, a multilayer circuit board, and a method of manufacturing a glass core that appropriately form copper wiring, and suppresses crack and the like, a glass core includes: a glass plate; a first metal layer provided on the glass plate; a first electrolytic copper plating layer provided on the first metal layer; a dielectric layer provided above the first electrolytic copper plating layer; a second metal layer provided on the dielectric layer; an electroless nickel plating layer provided on the second metal layer and having a phosphorus content of less than 5 mass %; and a second electrolytic copper plating layer provided on the electroless nickel plating layer.
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公开(公告)号:US20200343199A9
公开(公告)日:2020-10-29
申请号:US16430267
申请日:2019-06-03
Applicant: TOPPAN PRINTING CO., LTD.
Inventor: Tetsuyuki TSUCHIDA
IPC: H01L23/00 , H01L23/15 , H01L23/498 , H01L23/64 , H01L21/48
Abstract: A technique for making a glass core substrate that is less prone to cracking. A core substrate of the present invention includes a glass plate and a first conductor pattern provided on a first main surface of the glass plate. The first conductor pattern includes a first nickel plating layer that is provided on the first main surface of the glass plate and has a phosphorus content of 5 mass % or less and a first copper plating layer that is provided on the first nickel plating layer.
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公开(公告)号:US20180192510A1
公开(公告)日:2018-07-05
申请号:US15859234
申请日:2017-12-29
Applicant: TOPPAN PRINTING CO., LTD.
Inventor: Tetsuyuki TSUCHIDA
CPC classification number: H05K1/0271 , H01L21/4857 , H01L23/13 , H01L23/15 , H01L23/49816 , H01L23/49822 , H01L23/562 , H01L24/16 , H01L27/14618 , H01L2224/16235 , H01L2924/3512 , H05K1/0274 , H05K1/0306 , H05K3/02 , H05K2201/0108 , H05K2201/10121
Abstract: A wiring substrate that helps prevent cracking of a base material at the time of formation of a light transmissive portion, has high light transmittance, and allows formation of fine wiring, and a method for manufacturing the same. The wiring substrate includes: a base material with light transmittance; a laminated body formed by laminating a metal layer and a resin layer on at least one side of the base material; and a light transmissive portion as an opening provided in part of the laminated body. The wiring substrate is characterized in that at least part of side surfaces defining the light transmissive portion is formed from the resin layer, and adjacent the surface of the base material, part of the metal layer is adjacent to the resin layer constituting at least part of the side surfaces defining the light transmissive portion and is disposed to surround the resin layer.
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公开(公告)号:US20210144847A1
公开(公告)日:2021-05-13
申请号:US17122775
申请日:2020-12-15
Applicant: TOPPAN PRINTING CO.,LTD.
Inventor: Tetsuyuki TSUCHIDA
Abstract: A glass wiring board that can be kept from cracking by better preventing concentration of stresses in a glass plate on which a conductor layer including an electrolytic copper plating layer is provided, the wiring board includes: a glass plate; a first metal layer covering at least a part of the glass plate; and a second metal layer covering at least a part of the first metal layer, and the area of the first metal layer in contact with the second metal layer is smaller than the area of the second metal layer facing the first metal layer.
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公开(公告)号:US20190287930A1
公开(公告)日:2019-09-19
申请号:US16430267
申请日:2019-06-03
Applicant: TOPPAN PRINTING CO., LTD.
Inventor: Tetsuyuki TSUCHIDA
IPC: H01L23/00 , H01L23/15 , H01L23/498 , H01L23/64 , H01L21/48
Abstract: A technique for making a glass core substrate that is less prone to cracking. A core substrate of the present invention includes a glass plate and a first conductor pattern provided on a first main surface of the glass plate. The first conductor pattern includes a first nickel plating layer that is provided on the first main surface of the glass plate and has a phosphorus content of 5 mass % or less and a first copper plating layer that is provided on the first nickel plating layer.
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公开(公告)号:US20150334828A1
公开(公告)日:2015-11-19
申请号:US14808275
申请日:2015-07-24
Inventor: Tetsuyuki TSUCHIDA , Toshikazu OKUBO , lkuo SHOHJI , Akihiro HIRATA
CPC classification number: H05K1/09 , B23K1/0008 , B23K1/0016 , B23K1/008 , B23K1/19 , B23K35/262 , C22C13/02 , C25D7/00 , H01L2924/0002 , H05K3/10 , H05K3/244 , H05K2201/0341 , H05K2203/043 , H01L2924/00
Abstract: There is provided a wiring substrate including an electrode including Cu or a Cu alloy, a plating film having a film including at least Pd, formed on the electrode, and a solder which is bonded onto the plating film by heating, has a melting point of lower than 140° C., and includes Pd dissolved therein, a Pd concentrated layer being absent between the solder and the electrode.
Abstract translation: 提供一种布线基板,其包括包含Cu或Cu合金的电极,形成在电极上的至少包含Pd的镀膜和通过加热结合到镀膜上的焊料,其熔点为 低于140℃,并且包括溶解在其中的Pd,焊料和电极之间不存在Pd浓缩层。
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公开(公告)号:US20140332259A1
公开(公告)日:2014-11-13
申请号:US14444135
申请日:2014-07-28
Inventor: Tetsuyuki TSUCHIDA , Toshikazu OKUBO , Ikuo SHOHJI , Takahiro KANO
CPC classification number: H05K1/09 , C23C18/1651 , C23C18/36 , C23C18/44 , C23C18/50 , H05K3/243 , H05K3/244 , H05K2201/032 , H05K2201/0776 , H05K2203/072
Abstract: A wiring substrate includes an electrode including Cu or a Cu alloy, and a plated film including an electroless nickel-plated layer formed on the electrode and an electroless gold-plated layer formed on the electroless nickel-plated layer. The electroless nickel-plated layer is formed by co-precipitation of Ni, P, Bi, and S, the electroless nickel-plated layer includes a content of P of 5% by mass or more and less than 10% by mass, a content of Bi of 1 ppm by mass to 1,000 ppm by mass, and a content of S of 1 ppm by mass to 2,000 ppm by mass, and a mass ratio of the content of S to the content of Bi (S/Bi) is more than 1.0.
Abstract translation: 布线基板包括包含Cu或Cu合金的电极和形成在电极上的化学镀镍层和形成在化学镀镍层上的化学镀金层的镀膜。 化学镀镍层通过Ni,P,Bi和S的共沉淀形成,无电镀镍层的P含量为5质量%以上且小于10质量%,含量 的Bi为1质量ppm〜1000质量ppm,S为1质量ppm〜2000质量ppm,S含量与Bi(S / Bi)含量的质量比为更多 比1.0。
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