公开(公告)号：US20180261466A1

公开(公告)日：2018-09-13

申请号：US15695918

申请日：2017-09-05

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Soichi YAMAZAKI ,  Kazuhito FURUMOTO ,  Kosuke HORIBE ,  Keisuke KIKUTANI ,  Atsuko SAKATA ,  Junichi WADA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/3213

Abstract: A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.