公开(公告)号：US20180261466A1

公开(公告)日：2018-09-13

申请号：US15695918

申请日：2017-09-05

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Soichi YAMAZAKI ,  Kazuhito FURUMOTO ,  Kosuke HORIBE ,  Keisuke KIKUTANI ,  Atsuko SAKATA ,  Junichi WADA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/3213

Abstract: A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.

公开(公告)号：US20200051827A1

公开(公告)日：2020-02-13

申请号：US16286241

申请日：2019-02-26

Applicant: Toshiba Memory Corporation

Inventor： Mitsunari HORIUCHI ,  Toshiyuki SASAKI ,  Tomo HASEGAWA

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/3213

Abstract: A manufacturing method of a semiconductor device includes etching a film using etching gas that has a first or second molecule which has a C3F4 group and in which the number of carbon atoms is four or five. Further, the first molecule has an R1 group that bonds to a carbon atom in the C3F4 group through a double bond, and the R1 group contains carbon and also chlorine, bromine, iodine, or oxygen. Further, the second molecule has an R2 group that bonds to a carbon atom in the C3F4 group through a single bond and an R3 group that bonds to the carbon atom in the C3F4 group through a single bond, the R2 group or the R3 group or both containing carbon, and both the R2 group and the R3 group containing hydrogen, fluorine, chlorine, bromine, iodine, or oxygen.

公开(公告)号：US20210005463A1

公开(公告)日：2021-01-07

申请号：US17022640

申请日：2020-09-16

Applicant: Toshiba Memory Corporation

Inventor： Mitsunari HORIUCHI ,  Toshiyuki SASAKI ,  Tomo HASEGAWA

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/3065

Abstract: A manufacturing method of a semiconductor device includes etching a film using etching gas that has a first or second molecule which has a C3F4 group and in which the number of carbon atoms is four or five. Further, the first molecule has an R1 group that bonds to a carbon atom in the C3F4 group through a double bond, and the R1 group contains carbon and also chlorine, bromine, iodine, or oxygen. Further, the second molecule has an R2 group that bonds to a carbon atom in the C3F4 group through a single bond and an R3 group that bonds to the carbon atom in the C3F4 group through a single bond, the R2 group or the R3 group or both containing carbon, and both the R2 group and the R3 group containing hydrogen, fluorine, chlorine, bromine, iodine, or oxygen.

公开(公告)号：US20200269456A1

公开(公告)日：2020-08-27

申请号：US16872485

申请日：2020-05-12

Applicant: Toshiba Memory Corporation

Inventor： Toshiyuki SASAKI

IPC: B26B29/02 ,  H01L27/11582 ,  H01L27/11578 ,  H01L29/792 ,  G11C16/10 ,  H01L23/528 ,  H01L23/532 ,  H01L27/1157 ,  H01L21/311 ,  A45F5/02 ,  B24B3/54

Abstract: According to one embodiment, the stacked body includes a plurality of stacked units and a first intermediate layer. Each of the stacked units includes a plurality of electrode layers and a plurality of insulating layers. Each of the insulating layers is provided between the electrode layers. The first intermediate layer is provided between the stacked units. The first intermediate layer is made of a material different from the electrode layers and the insulating layers. The plurality of columnar portions includes a channel body extending in a stacking direction of the stacked body to pierce the stacked body, and a charge storage film provided between the channel body and the electrode layers.

公开(公告)号：US20190074249A1

公开(公告)日：2019-03-07

申请号：US15888348

申请日：2018-02-05

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Toshiyuki SASAKI

IPC: H01L23/535 ,  H01L21/768 ,  H01L27/11582

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked body that alternately includes a plurality of first films and a plurality of second films on a substrate. The method further includes performing a first process of forming N2 holes having N kinds of depths in the stacked body where N is an integer of three or more. The method further includes performing a second process of processing the N2 holes so as to have N2 kinds of depths after performing the first process.

公开(公告)号：US20180090369A1

公开(公告)日：2018-03-29

申请号：US15449712

申请日：2017-03-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Toshiyuki SASAKI

IPC: H01L21/768 ,  H01L21/311

CPC classification number: H01L21/76808 ,  H01L21/0268 ,  H01L21/027 ,  H01L21/0332 ,  H01L21/308 ,  H01L21/31144 ,  H01L21/76813 ,  H01L2221/1026 ,  H01L2221/1031 ,  H01L2221/1036

Abstract: A semiconductor device manufacturing method includes forming a first hole in a first processed layer. A first sacrificial film is formed in the first hole. A hole portion is formed in the first sacrificial film. A second sacrificial film is formed in the hole portion. A second processed layer is formed above the first sacrificial film and the second sacrificial film, and a second hole is formed in the second processed layer to expose the second sacrificial film. A third sacrificial film is formed on an inner side surface of the second hole, and a fourth sacrificial film is formed on the third sacrificial film. The second sacrificial film is etched using the fourth sacrificial film as a mask. The third sacrificial film exposed by etching the second sacrificial film is etched. The second processed layer is etched using the third sacrificial film as a mask.