公开(公告)号：US09287437B2

公开(公告)日：2016-03-15

申请号：US14173838

申请日：2014-02-06

Applicant: TSMC Solar Ltd.

Inventor： Chung-Hsien Wu ,  Hung-Yu Chang

IPC: H01L21/66 ,  H01L31/18 ,  H01L21/02

CPC classification number: H01L31/1836 ,  H01L21/02557 ,  H01L21/0262 ,  Y02E10/50

Abstract: A method for monitoring the process of fabricating solar cells generally comprises performing a reaction process in a chamber for a solar cell substructure, wherein the chamber includes a reaction solution that includes at least one chemical component. A concentration value is detected for the chemical component during the reaction process, via a detection assembly that is coupled to the chamber. The method further includes determining whether the detected concentration value is at a predefined threshold concentration level or within a predefined concentration range for the chemical component, via a control assembly that is coupled to the detection assembly. The concentration of the chemical component within the reaction solution is modified, during the reaction process, when the detected concentration value is different from the predefined threshold concentration level or different from the predefined concentration range.

Abstract translation: 用于监测制造太阳能电池的方法的方法通常包括在用于太阳能电池子结构的室中进行反应过程，其中所述室包括包含至少一种化学组分的反应溶液。 通过耦合到室的检测组件，在反应过程中检测化学成分的浓度值。 该方法还包括经由耦合到检测组件的控制组件来确定检测到的浓度值是否处于预定阈值浓度水平或化学成分的预定浓度范围内。 在反应过程中，当检测到的浓度值不同于预定阈值浓度水平或不同于预定浓度范围时，反应溶液中化学组分的浓度被改变。

公开(公告)号：US09048373B2

公开(公告)日：2015-06-02

申请号：US13916852

申请日：2013-06-13

Applicant: TSMC Solar Ltd.

Inventor： Chung-Hsien Wu ,  Chi-Yu Chiang ,  Shih-Wei Chen ,  Wen-Tsai Yen

IPC: H01L21/31 ,  H01L21/469 ,  H01L31/18 ,  H01L31/032 ,  H01L21/66

CPC classification number: H01L31/18 ,  H01L22/12 ,  H01L22/20 ,  H01L31/0322 ,  Y02E10/541

Abstract: An evaporation apparatus comprises a chamber configured to contain at least one dispensing nozzle and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one dispensing nozzle and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape. The at least one adjustable shielding member has a heater.

Abstract translation: 蒸发装置包括被配置为容纳至少一个分配喷嘴和至少一个待涂覆的基板的腔室。 腔室具有至少一个限定可调节孔径的可调节屏蔽构件。 所述构件位于所述至少一个分配喷嘴和所述至少一个基板之间。 孔径可以在由面积和形状组成的组中的至少一个中调节。 所述至少一个可调节屏蔽构件具有加热器。

公开(公告)号：US08846438B2

公开(公告)日：2014-09-30

申请号：US14219628

申请日：2014-03-19

Applicant: TSMC Solar Ltd.

Inventor： Wen-Tsai Yen ,  Chung-Hsien Wu ,  Shih-Wei Chen ,  Wen-Chin Lee

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/03923 ,  Y02E10/541

Abstract: A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap.

Abstract translation: 太阳能电池包括由CIGAS，铜，铟，镓，铝和硒形成的吸收层。 用于形成吸收层的方法提供使用铟 - 铝靶并使用溅射沉积沉积作为金属前体层的铝铟膜。 还提供另外的金属前体层，例如CuGa层，并且热处理操作引起金属前体层的硒化。 热处理操作/硒化操作将金属前体层转换成吸收层。 在一些实施例中，吸收层包括基于双梯度黄铜矿的带隙。

公开(公告)号：US08703524B1

公开(公告)日：2014-04-22

申请号：US13689091

申请日：2012-11-29

Applicant: TSMC Solar Ltd.

Inventor： Wen-Tsai Yen ,  Chung-Hsien Wu ,  Shih-Wei Chen ,  Wen-Chin Lee

IPC: H01L21/00

CPC classification number: H01L31/18 ,  H01L31/03923 ,  Y02E10/541

Abstract: A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap.

Abstract translation: 太阳能电池包括由CIGAS，铜，铟，镓，铝和硒形成的吸收层。 用于形成吸收层的方法提供使用铟 - 铝靶并使用溅射沉积沉积作为金属前体层的铝铟膜。 还提供另外的金属前体层，例如CuGa层，并且热处理操作引起金属前体层的硒化。 热处理操作/硒化操作将金属前体层转换成吸收层。 在一些实施例中，吸收层包括基于双梯度黄铜矿的带隙。

公开(公告)号：US09178088B2

公开(公告)日：2015-11-03

申请号：US14025852

申请日：2013-09-13

Applicant: TSMC SOLAR LTD.

Inventor： Wen-Tsai Yen ,  Jyh-Lih Wu ,  Wei-Lun Xu ,  Chung-Hsien Wu

IPC: H01L21/00 ,  H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L21/2225 ,  H01L21/225 ,  H01L21/324 ,  H01L21/67115 ,  H01L31/0749 ,  H01L31/186 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for fabricating a solar cell generally comprises delivering a solar cell substructure to a chamber. Electromagnetic radiation is generated using a wave generating device that is coupled to the chamber such that the wave generating device is positioned proximate to the solar cell substructure. The electromagnetic radiation is applied onto at least a portion of the solar cell substructure to facilitate the diffusion of at least one metal element through at least a portion of the solar cell substructure such that a semiconductor interface is formed between at least two different types of semiconductor materials of the solar cell substructure.

Abstract translation: 一种制造太阳能电池的方法通常包括将太阳能电池子结构递送到腔室。 使用耦合到室的波发生装置产生电磁辐射，使得波发生装置靠近太阳能电池子结构定位。 电磁辐射被施加到太阳能电池子结构的至少一部分上以促进至少一个金属元件通过至少一部分太阳能电池子结构的扩散，使得在至少两种不同类型的半导体之间形成半导体界面 太阳能电池底层材料。

公开(公告)号：US09178103B2

公开(公告)日：2015-11-03

申请号：US13962979

申请日：2013-08-09

Applicant: TSMC Solar Ltd.

Inventor： Chung-Hsien Wu ,  Wen-Tsai Yen ,  Jyh-Lih Wu

IPC: H01L31/0392 ,  H01L31/18 ,  C23C12/00

CPC classification number: H01L31/18 ,  C23C12/00 ,  H01L31/0322 ,  H01L31/03923 ,  Y02E10/541

Abstract: A method and system for forming chalcogenide semiconductor absorber materials with sodium impurities is provided. The system includes a sodium vaporizer in which a solid sodium source material is vaporized. The sodium vapor is added to reactant gases and/or annealing gases and directed to a furnace that includes a substrate with a metal precursor material. The precursor material reacts with reactant gases such as S-containing gases and Se-containing gases according to various process sequences. In one embodiment, a selenization operation is followed by an annealing operation and a sulfurization operation and the sodium vapor is caused to react with the metal precursor during at least one of the annealing and the sulfurization steps to produce a chalcogenide semiconductor absorber material that includes sodium dopant impurities.

Abstract translation: 提供了用钠杂质形成硫族化物半导体吸收材料的方法和系统。 该系统包括其中固体钠源材料蒸发的钠蒸发器。 将钠蒸汽加入到反应气体和/或退火气体中并引导到包括具有金属前体材料的基底的炉子。 根据各种工艺顺序，前体材料与诸如含S气体和含Se气体的反应气体反应。 在一个实施方案中，硒化操作之后是退火操作和硫化操作，并且在退火和硫化步骤中的至少一个期间使钠蒸气与金属前体反应以产生包含钠的硫族化物半导体吸收材料 掺杂杂质。

公开(公告)号：US09159863B2

公开(公告)日：2015-10-13

申请号：US13967549

申请日：2013-08-15

Applicant: TSMC Solar Ltd.

Inventor： Chung-Hsien Wu ,  Wen-Chin Lee

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/0322 ,  Y02E10/541

Abstract: In a method of forming a CIGS film absorption layer, a first precursor is provided including a first substrate having a major process precursor film formed thereon, the major process precursor film containing two or more of Cu, In, Ga, and Se. A second precursor is provided including a second substrate having an element supplying precursor film formed thereon, the element supply precursor film containing two or more of Cu, In, Ga and Se. The precursors are oriented with the major process precursor film and element supplying precursor film facing one another so as to allow diffusion of elements between the films during annealing. The oriented films are annealed and then the precursors are separated, wherein the CIGS film is formed over the first substrate and either a CIGS film or a precursor film containing two or more of Cu, In, Ga, and Se remains over the second substrate.

Abstract translation: 在形成CIGS膜吸收层的方法中，提供第一前体，其包括其上形成有主要工艺前体膜的第一衬底，所述主要工艺前体膜含有Cu，In，Ga和Se中的两种或更多种。 提供了第二前体，其包括具有形成在其上的元件供给前体膜的第二基板，所述元件供给前体膜包含Cu，In，Ga和Se中的两种或更多种。 前体被取向为主要的工艺前体膜和元素供应前体膜彼此面对，以便允许元素在退火期间在膜之间扩散。 对取向膜进行退火，然后将前体分离，其中CIGS膜形成在第一衬底上，并且CIGS膜或含有两个或更多个Cu，In，Ga和Se的前体膜保留在第二衬底上。

公开(公告)号：US09410236B2

公开(公告)日：2016-08-09

申请号：US13689172

申请日：2012-11-29

Applicant: TSMC Solar Ltd.

Inventor： Wen-Tsai Yen ,  Chung-Hsien Wu ,  Shih-Wei Chen ,  Ying-Hsin Wu ,  Jui-Fu Hsueh ,  Kuan-Chu Chen

IPC: C23C14/34 ,  C23C14/08 ,  H01J37/32 ,  C23C14/56

CPC classification number: C23C14/086 ,  C23C14/3407 ,  C23C14/3492 ,  C23C14/56 ,  H01J37/32651

Abstract: A sputtering apparatus comprises a chamber configured to contain at least one sputter target and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one sputter target and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape.

Abstract translation: 溅射装置包括被配置为容纳至少一个溅射靶和待涂覆的至少一个基底的室。 腔室具有至少一个限定可调节孔径的可调节屏蔽构件。 该构件位于至少一个溅射靶和至少一个衬底之间。 孔径可以在由面积和形状组成的组中的至少一个中调节。