公开(公告)号：US09159863B2

公开(公告)日：2015-10-13

申请号：US13967549

申请日：2013-08-15

Applicant: TSMC Solar Ltd.

Inventor： Chung-Hsien Wu ,  Wen-Chin Lee

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/0322 ,  Y02E10/541

Abstract: In a method of forming a CIGS film absorption layer, a first precursor is provided including a first substrate having a major process precursor film formed thereon, the major process precursor film containing two or more of Cu, In, Ga, and Se. A second precursor is provided including a second substrate having an element supplying precursor film formed thereon, the element supply precursor film containing two or more of Cu, In, Ga and Se. The precursors are oriented with the major process precursor film and element supplying precursor film facing one another so as to allow diffusion of elements between the films during annealing. The oriented films are annealed and then the precursors are separated, wherein the CIGS film is formed over the first substrate and either a CIGS film or a precursor film containing two or more of Cu, In, Ga, and Se remains over the second substrate.

Abstract translation: 在形成CIGS膜吸收层的方法中，提供第一前体，其包括其上形成有主要工艺前体膜的第一衬底，所述主要工艺前体膜含有Cu，In，Ga和Se中的两种或更多种。 提供了第二前体，其包括具有形成在其上的元件供给前体膜的第二基板，所述元件供给前体膜包含Cu，In，Ga和Se中的两种或更多种。 前体被取向为主要的工艺前体膜和元素供应前体膜彼此面对，以便允许元素在退火期间在膜之间扩散。 对取向膜进行退火，然后将前体分离，其中CIGS膜形成在第一衬底上，并且CIGS膜或含有两个或更多个Cu，In，Ga和Se的前体膜保留在第二衬底上。

公开(公告)号：US08846438B2

公开(公告)日：2014-09-30

申请号：US14219628

申请日：2014-03-19

Applicant: TSMC Solar Ltd.

Inventor： Wen-Tsai Yen ,  Chung-Hsien Wu ,  Shih-Wei Chen ,  Wen-Chin Lee

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/03923 ,  Y02E10/541

Abstract: A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap.

Abstract translation: 太阳能电池包括由CIGAS，铜，铟，镓，铝和硒形成的吸收层。 用于形成吸收层的方法提供使用铟 - 铝靶并使用溅射沉积沉积作为金属前体层的铝铟膜。 还提供另外的金属前体层，例如CuGa层，并且热处理操作引起金属前体层的硒化。 热处理操作/硒化操作将金属前体层转换成吸收层。 在一些实施例中，吸收层包括基于双梯度黄铜矿的带隙。

公开(公告)号：US20140261691A1

公开(公告)日：2014-09-18

申请号：US14164288

申请日：2014-01-27

Applicant: TSMC SOLAR LTD.

Inventor： Chien-Yao Huang ,  Yung-Sheng Chiu ,  Wen-Chin Lee

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method is disclosed for manufacturing an absorber layer, such as a CIS-based absorber layer, in a thin film solar cell, such as a CIS-based thin film solar cell. One method includes a selenization step, an annealing step, and a sulfuration step. Another method includes an annealing step and a sulfuration step. Additionally, a disclosed CIS-based absorber layer has a surface-to-bottom ratio of gallium which is greater than that for a conventional absorber layer and the ratio of sulfur to sulfur-plus-selenium is less than that for a conventional absorber layer. Also provided is a process for producing an absorber layer, such as a CIS-based absorber layer, over a large area where the layer is capable of achieving both a high open circuit voltage and a high fill factor by preferable depth composition profile through controllable gallium-diffusion/sulfur-incorporation and the enlarged grain size.

Abstract translation: 公开了一种用于在诸如CIS基薄膜太阳能电池的薄膜太阳能电池中制造诸如CIS系吸收体层之类的吸收层的方法。 一种方法包括硒化步骤，退火步骤和硫化步骤。 另一种方法包括退火步骤和硫化步骤。 另外，所公开的基于CIS的吸收层具有大于常规吸收层的表面与底部比的镓，并且硫与硫加硒的比例小于常规吸收层的比。 还提供了在大面积上生产吸收层的方法，例如基于CIS的吸收层，其中该层可以通过可控的镓的优选的深度组成分布来实现高开路电压和高填充因子 扩散/硫掺入和增大的晶粒尺寸。

公开(公告)号：US08703524B1

公开(公告)日：2014-04-22

申请号：US13689091

申请日：2012-11-29

Applicant: TSMC Solar Ltd.

Inventor： Wen-Tsai Yen ,  Chung-Hsien Wu ,  Shih-Wei Chen ,  Wen-Chin Lee

IPC: H01L21/00

CPC classification number: H01L31/18 ,  H01L31/03923 ,  Y02E10/541

Abstract: A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap.

Abstract translation: 太阳能电池包括由CIGAS，铜，铟，镓，铝和硒形成的吸收层。 用于形成吸收层的方法提供使用铟 - 铝靶并使用溅射沉积沉积作为金属前体层的铝铟膜。 还提供另外的金属前体层，例如CuGa层，并且热处理操作引起金属前体层的硒化。 热处理操作/硒化操作将金属前体层转换成吸收层。 在一些实施例中，吸收层包括基于双梯度黄铜矿的带隙。

公开(公告)号：US09601653B2

公开(公告)日：2017-03-21

申请号：US14303624

申请日：2014-06-13

Applicant: TSMC SOLAR LTD.

Inventor： Li Xu ,  Wen-Chin Lee

IPC: H01L21/02 ,  H01L31/18 ,  H01L31/032

CPC classification number: H01L31/1864 ,  H01L21/02299 ,  H01L21/02387 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/1876 ,  H01L31/1892 ,  Y02E10/50 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method includes placing at least two substrates on a substrate carrier at a distance from one another, placing the substrate carrier in a reaction chamber, depositing a precursor on the at least two substrates, and performing a first annealing process on the at least two substrates. The at least two substrates include a first content of a first material. The distance between the at least two substrates is based on the first content of the first material and at least one processing parameter. The disclosed method advantageously provides for improved Na-dosing control.