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1.
公开(公告)号:US20180130746A1
公开(公告)日:2018-05-10
申请号:US15823210
申请日:2017-11-27
Applicant: Tessera, Inc.
Inventor: Vage OGANESIAN , Ilyas MOHAMMED , Craig MITCHELL , Belgacem HABA , Piyush SAVALIA
IPC: H01L23/538 , H01L23/00 , H01L27/146 , H01L23/31 , H01L25/065 , H01L29/06 , H01L25/00 , H01L23/48
CPC classification number: H01L23/5384 , H01L23/3114 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/17 , H01L24/19 , H01L24/20 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H01L29/0657 , H01L2224/0237 , H01L2224/0401 , H01L2224/05552 , H01L2224/0557 , H01L2224/06181 , H01L2224/13024 , H01L2224/16145 , H01L2224/16225 , H01L2224/1703 , H01L2224/32145 , H01L2224/73204 , H01L2224/81805 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06544 , H01L2225/06555 , H01L2225/1058 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/1434 , H01L2924/1436 , H01L2924/1437 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00
Abstract: A structure including a first semiconductor chip with front and rear surfaces and a cavity in the rear surface. A second semiconductor chip is mounted within the cavity. The first chip may have vias extending from the cavity to the front surface and via conductors within these vias serving to connect the additional microelectronic element to the active elements of the first chip. The structure may have a volume comparable to that of the first chip alone and yet provide the functionality of a multi-chip assembly. A composite chip incorporating a body and a layer of semiconductor material mounted on a front surface of the body similarly may have a cavity extending into the body from the rear surface and may have an additional microelectronic element mounted in such cavity.
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公开(公告)号:US20160284627A1
公开(公告)日:2016-09-29
申请号:US15174983
申请日:2016-06-06
Applicant: Tessera, Inc.
Inventor: Vage OGANESIAN , Belgacem HABA , Ilyas MOHAMMED , Craig MITCHELL , Piyush SAVALIA
IPC: H01L23/48 , H01L25/065 , H01L23/00 , H01L21/768
CPC classification number: H01L23/481 , H01L21/76898 , H01L23/50 , H01L24/03 , H01L24/05 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2224/06181 , H01L2224/16145 , H01L2224/32145 , H01L2224/73204 , H01L2225/06513 , H01L2225/06541 , H01L2225/06544 , H01L2924/01322 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/00012 , H01L2924/00
Abstract: A method of fabricating a semiconductor assembly can include providing a semiconductor element having a front surface, a rear surface, and a plurality of conductive pads, forming at least one hole extending at least through a respective one of the conductive pads by processing applied to the respective conductive pad from above the front surface, forming an opening extending from the rear surface at least partially through a thickness of the semiconductor element, such that the at least one hole and the opening meet at a location between the front and rear surfaces, and forming at least one conductive element exposed at the rear surface for electrical connection to an external device, the at least one conductive element extending within the at least one hole and at least into the opening, the conductive element being electrically connected with the respective conductive pad.
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公开(公告)号:US20170098621A1
公开(公告)日:2017-04-06
申请号:US15379895
申请日:2016-12-15
Applicant: Tessera, Inc.
Inventor: Cyprian UZOH , Vage OGANESIAN , Ilyas MOHAMMED , Belgacem HABA , Piyush SAVALIA , Craig MITCHELL
CPC classification number: H01L24/05 , H01L2224/04042 , H01L2224/05083 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05169 , H01L2224/056 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01074 , H01L2924/013 , H05K1/09 , H05K3/4007 , H05K2201/032 , H05K2201/0326 , H05K2201/0338
Abstract: An electrical connection structure includes a variable-composition nickel alloy layer with a minor constituent selected from a group consisting of boron, carbon, and tungsten, wherein at least over a portion of a conductive substrate, the concentration of the minor constituent varies throughout the variable-composition nickel alloy layer in a direction from the bottom surface of the variable-composition nickel alloy layer to the top surface of the variable-composition nickel alloy layer.
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